Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,907	Request Pricing	-

BA223

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BA223
Description

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Datasheet

Datasheet

3907 In Stock

Popular Products

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

BSS138

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;

Details

LL4148

Rfe International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

E8WSDC12-32.768KTR

Ecliptek

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

Details

BAV99

Plessey Semiconductors Discrete Components Div

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Uniohm

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Kec

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

06035C103KAT2A

KYOCERA AVX

06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.

Details

LL4148

Secos

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SMBJ18CA

Brightking

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ERJ2RKF1002X

Panasonic

Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.

Details

LM107H/883

Linear Technology

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

Details

LM555CM

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

1N4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Continental Device India

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99LT1G

Onsemi

BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.

Details

LL4148

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDV303N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;

Details

M39029/58-360

Defense Logistics Agency

CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;

Details

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

Details

BA223 Technical Details

TYPE	DESCRIPTION
Package Body Material:	GLASS
Config:	SINGLE
Diode Type:	MIXER DIODE
JEDEC-95 Code:	DO-34
Surface Mount:	NO
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	AXIAL
Maximum Diode Capacitance:	3.5 pF
Package Style (Meter):	LONG FORM
JESD-30 Code:	O-LALF-W2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Case Connection:	ISOLATED

Category Top Products

MMBD301M3T5G

Onsemi

MMBD301M3T5G by Onsemi is a Schottky mixer diode with 30V reverse voltage, 1.5pF capacitance, and 0.45V forward voltage. It operates in the ultra-high frequency band, suitable for microwave applications. This single-configured diode is surface-mountable and has a max power dissipation of 0.2W.

BAT14-124

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-055R

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

BAT17-04WH6327

Infineon Technologies

Infineon's BAT17-04WH6327 is a Schottky mixer diode with 2 elements, 0.75 pF capacitance, and 0.6 V forward voltage. It operates in the very high to ultra high frequency band for applications like microwave mixers and detectors. The diode has a max power dissipation of 0.15 W and can handle temperatures from -55°C to 125°C.

BAT15-095D

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

DAP222M3T5G

Onsemi

DAP222M3T5G by Onsemi is a microwave mixer diode with common anode config, 2 elements, and 3.5 pF capacitance. It is used in applications requiring small outline surface mount diodes for high-frequency signal mixing and detection at temperatures up to 150°C.

SPD-121

Onsemi

Onsemi's SPD-121 is a surface mount mixer diode with GaAs element. Operating from 3.9 GHz to 11 GHz, it can withstand temperatures up to 150 °C. Ideal for microwave applications requiring high frequency mixing and detection.

BAT15-094ES

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-094H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-094P

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-103ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MBD201

Onsemi

The Onsemi MBD201 is a single mixer diode with Schottky technology, ideal for ultra high frequency applications. Featuring a max diode capacitance of 1.5 pF, it comes in a round cylindrical package made of plastic/epoxy material. With two terminals and through-hole terminal form, this diode is suitable for microwave mixing and detection tasks.

HSMS-2828-BLKG

Broadcom

HSMS-2828-BLKG by Broadcom is a Schottky mixer diode with 4 elements in a bridge configuration. Operating from -65 to 150°C, it has a forward voltage of 0.34V and reverse current of 0.1uA. Ideal for C band applications, this diode features a small outline package with nickel palladium gold finish for surface mount assembly.

BAT15-113S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 7.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

BA423L-T

NXP Semiconductors

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT17-06WE6327

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1SS295-TE85L(F)

Toshiba

Toshiba's 1SS295-TE85L(F) is a Schottky mixer diode with ultra-high frequency band, 0.9 pF capacitance, and 0.32 V forward voltage. Ideal for microwave applications due to its dual-element design and small outline package style.

BAR19-AZ1

STMicroelectronics

BAR19-AZ1 by STMicroelectronics is a single-config microwave mixer diode with ultra-high frequency band. Featuring Schottky technology, it has a max forward voltage of 0.6V and can handle up to 30A output current. Ideal for applications requiring high-frequency signal mixing in electronic circuits.

BAT17-07E6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT19-AZ2

STMicroelectronics

STMicroelectronics BAT19-AZ2 is a single mixer diode with 1.2 pF capacitance and 0.1 uA reverse current. Ideal for ultra high frequency applications, it has a max forward voltage of 1V and can handle up to 30A output current. The diode's Schottky technology and silicon element make it suitable for microwave mixer & detector needs.