Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,525	Request Pricing	-

SPD-121

Manufacturer

Onsemi
Manufacturer's Part Number

SPD-121
Description

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum Operating Frequency: 3.9 GHz; Maximum Operating Frequency: 11 GHz; Diode Element Material: GALLIUM ARSENIDE;
Datasheet

Datasheet

1525 In Stock

Popular Products

1N4148

Crimson Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1552200253

Molex

WIRE AND CABLE;

Details

2902037

Phoenix Contact

MODULAR TERMINAL BLOCK;

Details

LM555CN

Texas Instruments

LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.

Details

1N4148

Renesas Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

CL31B104KBCNNNC

Samsung Electro-mechanics

Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.

Details

1N4148WS

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99W-7-F

Diodes Incorporated

Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.

Details

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;

Details

BSS123-7-F

Diodes Incorporated

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.

Details

LM7805CT

Texas Instruments

LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.

Details

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM555CN

Harris Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

LM317T

Inchange Semiconductor

Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;

Details

2N7002

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;

Details

NC7WZ17P6X

Onsemi

The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.

Details

BSS123,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

Details

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

Details

LM2675M-ADJ/NOPB

National Semiconductor

SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

SPD-121 Technical Details

TYPE	DESCRIPTION
Diode Element Material:	GALLIUM ARSENIDE
Minimum Operating Frequency:	3.9 GHz
Diode Type:	MIXER DIODE
Maximum Operating Temperature:	150 Cel
Maximum Operating Frequency:	11 GHz
Sub-Category:	Microwave Mixer Diodes
Surface Mount:	YES

Category Top Products

DB2J50100L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TGD0624XSMX

Texas Instruments

TGD0624XSMX by Texas Instruments is a single Schottky mixer diode with Gallium Arsenide element. It operates in the very high frequency to millimeter wave band, suitable for microwave applications. This surface-mount diode has a ceramic-metal-sealed co-fired package and wrap-around terminals.

BA592E6433XT

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-044P

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

1N5712-AZ1

STMicroelectronics

1N5712-AZ1 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. It is designed for very high frequency to ultra high frequency applications, featuring a glass package and isolated case connection. With a max power dissipation of 0.43 W, it is suitable for microwave circuits requiring high-frequency signal detection.

NSR15SDW1T1

Onsemi

NSR15SDW1T1 by Onsemi is a Schottky mixer diode with 2 elements, max reverse voltage of 15V, and forward voltage of 0.415V. It operates b/w -65 to 150 °C, has a package style of small outline, and is suitable for microwave applications requiring low diode capacitance.

HSMS-2822-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS70SB82

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2860-BLKG

Broadcom

HSMS-2860-BLKG by Broadcom is a Schottky mixer diode with frequency range of 0.915 GHz to 5.8 GHz, ideal for C Band applications. It features a small outline package, surface mount configuration, and can operate at temperatures up to 150°C.

MMBD770T1

Onsemi

MMBD770T1 by Onsemi is a single Schottky mixer diode with 70V max repetitive peak reverse voltage. It operates in very high to ultra high frequency bands, with a max forward voltage of 1V and 1pF diode capacitance. Ideal for microwave applications requiring small outline surface mount packages.

BAT14-123H

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15099RE6327HTSA1

Infineon Technologies

Infineon's BAT15099RE6327HTSA1 is a Schottky mixer diode with 4 elements, suitable for X Band applications. It features low barrier Schottky technology, 0.5 pF diode capacitance, and operates b/w -55 to 150 °C. This small outline package has a max power dissipation of 0.1 W and tin terminal finish.

HSMS-282K-BLK

Broadcom

HSMS-282K-BLK by Broadcom is a Schottky mixer diode with a max forward voltage of 0.7V and a reverse test voltage of 1V. It operates in temperatures ranging from -65°C to 150°C, making it suitable for microwave applications requiring high-performance diodes in small outline packages.

BAT1706WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BA277-01

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SBL-122

Onsemi

SBL-122 by Onsemi is a surface mount mixer diode with GaAs element. It operates from 3.9 GHz to 12 GHz, ideal for microwave applications. With a max temp of 150 °C, it's suitable for high-frequency circuits in various electronic devices.

HSMS-8101-BLKG

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-02LS

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS88SB82T/R

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

TGD0654SSMX

Texas Instruments

TGD0654SSMX by Texas Instruments is a Schottky mixer diode with Gallium Arsenide element material. It operates in the very high frequency to millimeter wave band, making it suitable for applications requiring high-frequency mixing and detection. This surface-mount diode has a ceramic, metal-sealed co-fired package body ideal for compact designs.