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MJD122T4
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ManufacturerMotorola
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Manufacturer's Part NumberMJD122T4
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DescriptionNPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;
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Datasheet
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DetailsMJD122T4 Technical Details
TYPE | DESCRIPTION |
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Nominal Transition Frequency (fT): | 4 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 8 A |
Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | NPN |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 100 |
No. of Terminals: | 2 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 100 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 3500 ns |
JESD-30 Code: | R-PDSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Maximum Collector-Base Capacitance: | 200 pF |
Case Connection: | COLLECTOR |
Maximum VCEsat: | 4 V |
Maximum Power Dissipation Ambient: | 20 W |