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| QTY | Unit Price | Ext Price |
| 3,370 | $0.590 | $1,988.132 |
MJD122T4
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ManufacturerMotorola
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Manufacturer's Part NumberMJD122T4
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DescriptionNPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;
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Datasheet
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DetailsMJD122T4 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 4 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 8 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 3500 ns |
| JESD-30 Code: | R-PDSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 20 W |
| Other Names: | MJD122T4OSTR MJD122T4OSDKR MJD122T4OSCT |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 100 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 100 V |
| Maximum Collector-Base Capacitance: | 200 pF |
| Maximum VCEsat: | 4 V |
