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MJD45H11T4
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ManufacturerMotorola
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Manufacturer's Part NumberMJD45H11T4
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DescriptionPNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
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Datasheet
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DetailsMJD45H11T4 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 40 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 8 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 20 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 640 ns |
| JESD-30 Code: | R-PDSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 20 W |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 40 |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 80 V |
| Maximum VCEsat: | 1 V |
