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7,429	$0.452	$3,359.394

BD679

Manufacturer

Comset Semiconductors
Manufacturer's Part Number

BD679
Description

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
Datasheet

Datasheet

7429 In Stock

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TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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BD679 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	.06 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	4 A
Configuration:	DARLINGTON
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Maximum Turn On Time (ton):	1500 ns
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	40 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	5000 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Other Names:	BD679OS
JEDEC-95 Code:	TO-126
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	750
Maximum Collector-Emitter Voltage:	80 V
Maximum VCEsat:	2.5 V

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NJVMJD32CT4G-VF01

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NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.

Bulk

BD679

7429 In Stock

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BD679 Technical Details

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2SC5200