Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
990	Request Pricing	-

MT4C4001JDJ-6

Manufacturer

Micron Technology
Manufacturer's Part Number

MT4C4001JDJ-6
Description

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOJ; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
Datasheet

Datasheet

990 In Stock

Popular Products

1N4148

Temic Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Bytesonic Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

STM32H753IIK6

STMicroelectronics

STM32H753IIK6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and peripherals like CAN, ETHERNET, and USB. Ideal for industrial applications requiring high-speed processing and extensive connectivity options.

Details

LL4148

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BSS138

Vishay Intertechnology

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.

Details

BAV99

Weitron Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Output Current: .215 A; JESD-609 Code: e0; Maximum Forward Voltage (VF): .715 V;

Details

M24308/2-1F

Bel Fuse

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;

Details

2N7002-T1-E3

Vishay Intertechnology

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

Details

1N4148WS

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

C1210C104K5RACTU

KEMET Corporation

KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.

Details

LM358MX

Texas Instruments

LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.

Details

1N4148

Grande Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Pulse Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Fairchild Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Itt Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

Details

BAV99

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

2N2222A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BAV99

Secos

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MT4C4001JDJ-6 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.001 Amp
Organization:	1MX4
Output Characteristics:	3-STATE
Maximum Seated Height:	3.61 mm
Access Mode:	FAST PAGE
Minimum Supply Voltage (Vsup):	4.5 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	110 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	20
No. of Words:	1048576 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	CMOS
JESD-30 Code:	R-PDSO-J20
Package Shape:	RECTANGULAR
Terminal Form:	J BEND
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	SOJ
Width:	7.67 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4194304 bit
Self Refresh:	NO
Memory IC Type:	FAST PAGE DRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	4
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	SOJ20/26,.34
Refresh Cycles:	1024
Length:	17.17 mm
Maximum Access Time:	60 ns
No. of Words Code:	1M
Nominal Supply Voltage / Vsup (V):	5
Additional Features:	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	5.5 V
Power Supplies (V):	5

Category Top Products

KM4232W259A-60

Samsung

Samsung KM4232W259A-60 is a 256KX32 DRAM with 8388608 bit memory density. Operating at 5V, it offers fast page access with EDO technology and has a max access time of 60ns. Ideal for video applications due to its high memory capacity and fast data retrieval speed.

IS42S16320D-7TLI-TR

Integrated Silicon Solution

IS42S16320D-7TLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation and self-refresh capability. It operates at 3.3V, has a clock frequency of 143MHz, and is ideal for industrial applications requiring high-speed memory access.

IS42S16160J-6BLI

Integrated Silicon Solution

IS42S16160J-6BLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance in a compact grid array package.

M378T5663QZ3-CF7

Samsung

Samsung M378T5663QZ3-CF7 is a 256MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory width of 64 bits. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

IS42VS16160J-75TLI

Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, small outline package, and industrial temperature grade suitable for memory-intensive applications in various industries.

MT48LC16M16A2P-75IT:D

Micron Technology

Micron Technology's MT48LC16M16A2P-75IT:D is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package for space-constrained designs.

MT48LC4M32B2P-6AXIT:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6AXIT:LTR is a 4MX32 Synchronous DRAM with a memory density of 134217728 bits. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.

IS42S16800F-7TL-TR

Integrated Silicon Solution

IS42S16800F-7TL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 134217728 bit memory density. It operates at a max clock frequency of 143 MHz and has a memory width of 16. Ideal for applications requiring high-speed data processing in commercial temperature environments.

MT48LC8M16A2TG-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:L is a 8MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.

K4H561638H-UCB3

Samsung

Samsung's K4H561638H-UCB3 DDR1 DRAM features 16MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.

KM44C256AP-8

Samsung

Samsung's KM44C256AP-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features fast page access mode and 512 refresh cycles, suitable for commercial temperature grade applications. With a memory density of 1048576 bits, it offers common I/O type and through-hole terminal form.

MT48LC4M32B2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AAIT:L is a 3.3V, 4MX32 Synchronous DRAM with self-refresh capability. Operating in industrial temperature range (-40 to 85 °C), it offers fast access time of 5.4 ns and features four bank page burst access mode, making it ideal for high-performance computing applications.

IS42S16160J-7BL-TR

Integrated Silicon Solution

IS42S16160J-7BL-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.

MT53E256M16D1DS-046AAT:B

Micron Technology

Micron Technology's MT53E256M16D1DS-046AAT:B is a LPDDR4 DRAM with 256MX16 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.

MT46V16M16P-5BIT:MTR

Micron Technology

Micron Technology's MT46V16M16P-5BIT:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for industrial applications requiring fast access times and reliable performance in a compact form factor.

MT48LC8M16A2P-7EIT

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT is a 8MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.

NT5CC64M16GP-DIT

Nanya Technology

NT5CC64M16GP-DIT by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as smartphones, tablets, and networking equipment.

MT48LC16M16A2BG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2BG-75IT:DTR is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory with low power consumption.

MT41K128M8DA-107IT:J

Micron Technology

MT41K128M8DA-107IT:J by Micron Technology is a DDR3L DRAM with 128MX8 organization and 1.35V nominal voltage. It operates at a max clock frequency of 933 MHz and is commonly used in applications requiring high-speed memory access, such as servers and high-performance computing systems.

IS42S16320D-7TL

Integrated Silicon Solution

IS42S16320D-7TL by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features self-refresh and common I/O type, suitable for applications requiring fast memory access in commercial temperature environments.