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IRLHS6376TRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRLHS6376TRPBF
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.6 W; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

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Details

IRLHS6376TRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.6 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	6.6 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.082 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3.4 A
Peak Reflow Temperature (C):	260

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