BSS126H6327XTSA2 by Infineon Technologies

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BSS126H6327XTSA2

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS126H6327XTSA2
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 1.5 pF; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
Datasheet

Datasheet

862 In Stock

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BSS126H6327XTSA2 Technical Details

TYPE	DESCRIPTION
Other Names:	BSS126H6327XTSA2DKR BSS126H6327XTSA2TR SP000919334 BSS126H6327XTSA2CT
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	1.5 pF
Maximum Drain Current (ID):	.021 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Maximum Drain-Source On Resistance:	500 ohm
Moisture Sensitivity Level (MSL):	1

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