BSR302NL6327HTSA1 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
103	$0.092	$9.491

BSR302NL6327HTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSR302NL6327HTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .023 ohm; Maximum Feedback Capacitance (Crss): 43 pF; No. of Elements: 1;
Datasheet

Datasheet

103 In Stock

Popular Products

1N4148

Philips Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;

Details

SMBJ18CA

Yageo

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Onsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WS

Sinyork

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;

Details

SS14

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;

Details

BSS138

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;

Details

MBRS130LT3G

Onsemi

MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.

Details

IRLML6401TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

Details

M39029/56351

Esterline Technologies

CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;

Details

LM107H

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

Details

1N4148

Unitrode

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LL4148

Vishay Intertechnology

Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.

Details

SMBJ18CA

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBR0540T1G

Onsemi

MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.

Details

1N4148

Panjit International

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Vishay Sprague

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Compensated Devices

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

Details

BAV99

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSR302NL6327HTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3.7 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.023 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSR302NL6327HTSA1CT IFEINFBSR302NL6327HTSA1 BSR302N L6327-ND BSR302N L6327CT BSR302N L6327TR-ND BSR302N L6327CT-ND BSR302N L6327DKR-ND BSR302NL6327HTSA1DKR 2156-BSR302NL6327HTSA1 BSR302N L6327 BSR302NL6327HTSA1TR BSR302N L6327DKR BSR302NL6327 SP000257785
Maximum Feedback Capacitance (Crss):	43 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Category Top Products

FDS4672A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

BSS138WQ-13-F

Diodes Incorporated

BSS138WQ-13-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W max power dissipation and -55 to 150°C operating temp range, it's suitable for small outline SMT designs.

BS170/D26Z

National Semiconductor

BS170/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A ID. It operates in ENHANCEMENT MODE, has 3 terminals, and 5 ohm Drain-Source On Resistance. Widely used in electronic circuits for amplification and switching applications due to its SILICON element material and THROUGH-HOLE terminal form.

PMV65XPEAR

Nexperia

PMV65XPEAR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.8A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. AEC-Q101 & IEC-60134 compliant, it operates in ENHANCEMENT MODE with 0.078 ohm RDS(on).

FDC6305N

Onsemi

FDC6305N by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.7A, Max Power Dissipation of 0.96W, and Max Operating Temperature of 150°C. This small outline transistor has a rectangular package and operates in ENHANCEMENT MODE.

NTS2101PT1G

Onsemi

NTS2101PT1G by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage, 3.7A max drain current, and 0.1 ohm max on resistance. Ideal for switching applications in small outline packages, operating at up to 150°C with matte tin terminal finish.

BSS138_NL

Fairchild Semiconductor

BSS138_NL by Fairchild Semiconductor is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 6 ohm RDS. It is used for switching applications in enhancement mode with a max operating temperature of 150°C.

NTS4101PT1G

Onsemi

NTS4101PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.12 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max Drain Current of 1.37A and can withstand temperatures up to 150°C.

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

MMBFJ201

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Package Shape: RECTANGULAR;

BSS123L

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

FDG6332C-F085P

Onsemi

Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.

2N7002T

Tak Cheong Electronics Holdings

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

FDS4675_F085

Fairchild Semiconductor

FDS4675_F085 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 11A Drain Current, and 0.013 ohm On Resistance. With ENHANCEMENT MODE operation, it has a max temp of 175°C and comes in an 8-terminal GULL WING package.

BSS138PW

NXP Semiconductors

NXP Semiconductors' BSS138PW is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features 1.6 ohm RDS(on) and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and is surface mountable.

FDN5630

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 1;

NDS356AP

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

2N7002KW

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;

IRF7820TRPBF

Infineon Technologies

IRF7820TRPBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It has 3.7A Drain Current, 0.078 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor in GULL WING package is designed for ENHANCEMENT MODE operation.

SI2323DS-T1-GE3

Vishay Intertechnology

SI2323DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. Suitable for surface mount, it has a max temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.