BSR302NL6327HTSA1 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
103	$0.092	$9.491

BSR302NL6327HTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSR302NL6327HTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .023 ohm; Maximum Feedback Capacitance (Crss): 43 pF; No. of Elements: 1;
Datasheet

Datasheet

103 In Stock

Popular Products

LP2950CDT-3.3G

Onsemi

LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.

Details

261

Mercury Systems

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

Details

2N2222A

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

MC33269T-3.3G

Onsemi

MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.

Details

M24308/2-1F

Esterline Technologies

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;

Details

BAV99W-7-F

Diodes Incorporated

Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.

Details

BSS138

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;

Details

LM555CMX

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LM358AN

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

ERJ3GEY0R00V

Panasonic

ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.

Details

BSS138BK,215

NXP Semiconductors

NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.

Details

1N4148W-7-F

Diodes Incorporated

1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.

Details

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

Details

STM32H743BIT6

STMicroelectronics

STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.

Details

1N4148WT

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LIS2DH12TR

STMicroelectronics

LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.

Details

SS14

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Telcom Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LL4148

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSR302NL6327HTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	3.7 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.023 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSR302NL6327HTSA1CT IFEINFBSR302NL6327HTSA1 BSR302N L6327-ND BSR302N L6327CT BSR302N L6327TR-ND BSR302N L6327CT-ND BSR302N L6327DKR-ND BSR302NL6327HTSA1DKR 2156-BSR302NL6327HTSA1 BSR302N L6327 BSR302NL6327HTSA1TR BSR302N L6327DKR BSR302NL6327 SP000257785
Maximum Feedback Capacitance (Crss):	43 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Category Top Products

BS170

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; JEDEC-95 Code: TO-92; Minimum DS Breakdown Voltage: 60 V;

BSS138PW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Minimum DS Breakdown Voltage: 60 V; Operating Mode: ENHANCEMENT MODE;

NUD3105DMT1G

Onsemi

NUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V breakdown voltage, 0.5A drain current, and 1.3 ohm on resistance. Ideal for surface mount designs in small outline packages at temperatures up to 150°C.

FDG6332C-F085

Onsemi

FDG6332C-F085 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm on-resistance. Suitable for surface mount with Gull Wing terminals in a small outline package.

ZVN2110A

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;

BS170-D27Z

Onsemi

BS170-D27Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.5A Drain Current and 5 ohm On Resistance. Operating at 150°C, it comes in a ROUND package with THROUGH-HOLE terminals.

NX7002AK,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: IEC-60134; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

DMN3067LW-7

Diodes Incorporated

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;

BSS84W-7-F

Diodes Incorporated

BSS84W-7-F by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. This MOSFET comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.

2N7000

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;

BSS123

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

2N7002K

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30;

BSS84

Yangzhou Yangjie Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;

NX7002AK,215

NXP Semiconductors

NXP Semiconductors' NX7002AK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.19A drain current. Ideal for switching applications, it operates in enhancement mode with 5.2 ohm on resistance. With a max power dissipation of 1.33W, this small outline transistor has a peak reflow temperature of 260°C.

2N7002KT7G

Onsemi

2N7002KT7G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.32A ID, and 1.6 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include PLASTIC/EPOXY body, GULL WING terminals, and -55 to 150 °C temp range.

SI4909DY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8 A; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .027 ohm;

2N7002

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

2N7000

Teledyne Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-226AA; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;

NTR4003NT1G

Onsemi

NTR4003NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.5A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150°C. Suitable for surface mount with GULL WING terminals.

MMBFJ112

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;