BSR302NL6327HTSA1 by Infineon Technologies

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BSR302NL6327HTSA1

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part Number
    BSR302NL6327HTSA1
  • Description
    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .023 ohm; Maximum Feedback Capacitance (Crss): 43 pF; No. of Elements: 1;
  • Datasheet

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BSR302NL6327HTSA1 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 43 pF
Maximum Drain Current (ID): 3.7 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .023 ohm
Moisture Sensitivity Level (MSL): 1

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