BCP5616H6327XTSA1 by Infineon Technologies

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BCP5616H6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BCP5616H6327XTSA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
Datasheet

Datasheet

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BCP5616H6327XTSA1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	80 V
Additional Features:	TR, 7 INCH; 1000
Reference Standard:	AEC-Q101
Maximum VCEsat:	.5 V

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