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1075MP

Manufacturer

Ghz Technology
Manufacturer's Part Number

1075MP
Description

NPN; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet

Datasheet

Not In Stock

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1075MP Technical Details

TYPE	DESCRIPTION
Maximum Collector Current (IC):	6.5 A
Maximum Power Dissipation (Abs):	250 W
Transistor Element Material:	SILICON
No. of Elements:	1
Sub-Category:	BIP RF Small Signal
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	20

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The Onsemi MMBT5770 is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 600MHz. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a min hFE of 30, it offers 0.225W power dissipation and 0.00009A max collector current.

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RF Small Signal Bipolar Transistors;

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1075MP

Not In Stock

Popular Products

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1075MP Technical Details

Category Top Products

MMBT5770

SS9018E

MMBTH10LT1G

2SC4399-4

BFR520,215

BFR93A

BFR93AW

BF495

MSC80195

MMBTH11

MSC80196

SMA540BTR

HFA3046BZ96

MMPQ2369R2G

934063131115

MCH4014-TL-H

BFT92E6327

BFQ256-T

SMMBTH10-4LT3G

BFY90