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2N7002W

Manufacturer

Weitron Technology
Manufacturer's Part Number

2N7002W
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet

Datasheet

2870 In Stock

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SS14

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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2N2222A

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2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).

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2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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1554216002

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WIRE AND CABLE;

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SS14

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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M39029/58-360

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CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;

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LM107H/883

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LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

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DS18B20U+

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DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.

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M39029/58-360

Molex

CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;

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1N4148W-7-F

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1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.

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NC7WZ07P6X

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BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

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08055C104KAT4A

KYOCERA AVX

08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.

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BAV99

Silicon Standard

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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BSS138

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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STM32H753ZIT6

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STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.

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2N7002W Technical Details

TYPE	DESCRIPTION
Other Names:	2N7002WCT 2N7002WDKR 2156-2N7002W-OS ONSONS2N7002W 2N7002WTR
Maximum Power Dissipation (Abs):	.3 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	.115 A
Maximum Drain Current (Abs) (ID):	.115 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES

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DMN6075S-7

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DMN6075S-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 2A ID, and 0.085 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.15W. Its small outline package makes it suitable for surface mount designs at temperatures ranging from -55 to 150°C.

BF862,215

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BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.

FDC5614P

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;

FDS4675_F085

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ZXMP6A13FTA

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ZXMP6A13FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 1.1A Drain Current, and 0.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150°C.

2N7000

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

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2N7002W

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

SI2308BDS-T1-GE3

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SI2308BDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 2.3A max drain current, ideal for switching applications. It operates in enhancement mode with a max power dissipation of 1.66W at 150°C, featuring a small outline package style for surface mount assembly.

ZXMS6004FFTA

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ZXMS6004FFTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.6 ohm RDS(on), and built-in diode for switching applications. It's a small outline package with matte tin finish, suitable for enhancement mode operation in automotive electronics conforming to AEC-Q101 standard.

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;

FDN340P_NL

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FDN340P_NL by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 2A Drain Current, and 70 ohm On Resistance. With an Operating Temperature range of -55 to 150 °C, this MOSFET is ideal for small outline surface mount designs.

NTF3055-100T1G

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NTF3055-100T1G by Onsemi is a N-channel FET with 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 2.1W, this MOSFET has a peak reflow temperature of 260°C and matte tin terminal finish.

Bulk

2N7002W

2870 In Stock

Popular Products

MBR0540T1G

SS14

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1554216002

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M39029/58-360

LM107H/883

1554216004

DS18B20U+

M39029/58-360

1N4148W-7-F

NC7WZ07P6X

08055C104KAT4A

BAV99

BSS138

1N4148

LL4148

STM32H753ZIT6

2N7002W Technical Details

Category Top Products

FDV303N_NL

DMN6075S-7

BF862,215

FDC5614P

FDS4675_F085

ZXMP6A13FTA

2N7000

BC548B

2N7000

BS170

2N7002W

SI2308BDS-T1-GE3

ZXMS6004FFTA

2N7000

FDN340P_NL

NTF3055-100T1G

2N7000

IRFL9110TRPBF

2N7002T

BSS138PW