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ULN2803AP

Manufacturer

Toshiba
Manufacturer's Part Number

ULN2803AP
Description

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V; Terminal Position: DUAL;
Datasheet

Datasheet

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ULN2803AP Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1000
No. of Terminals:	18
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T18
No. of Elements:	8
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Additional Features:	LOGIC LEVEL COMPATIBLE, BUILT-IN BIAS RESISTOR RATIO IS 1.11
Maximum Operating Temperature:	85 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.6 V

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