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ULN2803AP
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ManufacturerToshiba
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Manufacturer's Part NumberULN2803AP
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DescriptionNPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V; Terminal Position: DUAL;
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Datasheet
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DetailsULN2803AP Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .5 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 1000 |
| No. of Terminals: | 18 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PDIP-T18 |
| No. of Elements: | 8 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Additional Features: | LOGIC LEVEL COMPATIBLE, BUILT-IN BIAS RESISTOR RATIO IS 1.11 |
| Maximum Operating Temperature: | 85 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 1.6 V |
