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ULN2803AFWG
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ManufacturerToshiba
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Manufacturer's Part NumberULN2803AFWG
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DescriptionNPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 1000; Qualification: Not Qualified;
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Datasheet
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DetailsULN2803AFWG Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .5 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Polarity or Channel Type: | NPN |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 1000 |
No. of Terminals: | 18 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G18 |
No. of Elements: | 8 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Peak Reflow Temperature (C): | NOT SPECIFIED |