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BC817-25

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

BC817-25
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
Datasheet

Datasheet

5853 In Stock

Popular Products

2N7002

Transys Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

Details

LL4148

Lite-on Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148WT

Onsemi

1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.

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2N2222A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N7002

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

Details

LL4148

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

MBRA340T3G

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MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.

Details

1N4148WS

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WT

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CM

National Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

SS14

Forward International Electronics

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;

Details

BSS138W-7-F

Diodes Incorporated

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

2N7002

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;

Details

SMBJ18CA

Zowie Technology

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

Details

L7805CV

Sgs-ates Componenti Electronici S P A

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Output Voltage-1: 5 V;

Details

BAV99

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Sangdest Microelectronics (Nanjing)

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148

Onsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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2N2222A

Telcom Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BC817-25 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.25 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	160
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	45 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.7 V

Category Top Products

2N2222AUA

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NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Turn Off Time (toff): 300 ns; Transistor Element Material: SILICON;

MMBT3906

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PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

SMMBT3904LT1G

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SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

MMBT2222A

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 75;

KSP13TA

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KSP13TA by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 125MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.

BC817-40W,115

NXP Semiconductors

NXP Semiconductors' BC817-40W,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it has a transition frequency of 100MHz making it suitable for high-speed switching circuits.

BC817-25

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

JANTX2N2222A

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

BC817-25-7-F

Diodes Incorporated

Diodes Inc's BC817-25-7-F is a NPN small signal BJT transistor with a max collector-emitter voltage of 45V and max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and fast nominal transition frequency of 100MHz.

BC857BS,115

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BC857BS,115 by NXP Semiconductors is a PNP BJT transistor with 2 elements for switching applications. It has a hFE of 200, VCEO of 45V, and IC of 0.1A. This surface-mount transistor operates up to 150°C and has a transition frequency of 100MHz.

MMBT3904

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

JANTX2N2222AUBT/R

Microchip Technology

JANTX2N2222AUBT/R by Microchip is a NPN BJT transistor for switching applications. It has hFE of 30, Vce of 50V, and Ic of 0.8A. With a turn on time of 35ns and turn off time of 300ns, it's ideal for fast-switching circuits in military-grade electronics per MIL-19500/255 standards.

2N2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

MMBT3904

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;

BC547C

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;

2N2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;

MMBT2222A

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

SMBT2907AE6327HTSA1

Infineon Technologies

SMBT2907AE6327HTSA1 by Infineon is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 60V, max collector current of 0.6A, and min DC current gain of 50. Ideal for small outline packages in high-speed switching circuits up to 200MHz.

2N2219A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .6 A;