Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
4,292	Request Pricing	-

TIS125

Manufacturer

Texas Instruments
Manufacturer's Part Number

TIS125
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;
Datasheet

Datasheet

4292 In Stock

Popular Products

1N4148WT

Jiangsu Changjiang Electronics Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

06035C104KAT2A

KYOCERA AVX

06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.

Details

1N4148WS-7-F

Diodes Incorporated

1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.

Details

1N4148

Excel (Suzhou) Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WS

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ABS10-32.768KHZ-T

Abracon

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

Details

08055C104KAT4A

KYOCERA AVX

08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.

Details

BAV99

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ABS06-32.768KHZ-T

Abracon

Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.

Details

PIC18F4550T-I/PT

Microchip Technology

The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.

Details

2N2222A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BAV99

Infineon Technologies

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Vishay Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LL4148

Synsemi

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

L78L05ABZ-AP

STMicroelectronics

L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.

Details

1N4148WS

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM107H

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

Details

1N4148

Hy Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SS14

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

TIS125 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	450 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-18
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	30
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.25 W
Maximum Collector-Emitter Voltage:	30 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

KSC2223YMTF

Onsemi

KSC2223YMTF by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max operating temp of 150°C and can handle a max collector-emitter voltage of 20V. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mounting.

JANTX2N3866A

Raytheon Semiconductor

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Package Body Material: METAL;

2SC5536A-TL-H

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

MPSH10RLRM

Onsemi

MPSH10RLRM by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Its package is cylindrical, suitable for ultra-high frequency applications at up to 150 °C operating temperature. Ideal for RF amplification in communication systems.

934063133215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

AT-32032-TR1G

Agilent Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .04 A; Moisture Sensitivity Level (MSL): 1; Terminal Position: DUAL;

KSP10TA

Onsemi

The Onsemi KSP10TA is an NPN BJT transistor with a max power dissipation of 0.35W and a transition frequency of 650MHz. It is ideal for applications requiring ultra high frequency band operation, such as RF signal amplification in electronic devices.

SS9018H

Onsemi

SS9018H by Onsemi is an NPN BJT transistor for RF applications. It has a max VCEsat of 0.5V, hFE of 97, and fT of 1100MHz. Ideal for amplifier circuits in L Band frequencies with a max operating temp of 150 °C.

START420TR

STMicroelectronics

START420TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.18 W, operates up to 150 °C, and supports C band frequencies. This compact surface mount transistor ensures efficient performance in electronic circuits.

2SC5347AF-TD-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;

MMBTH24LT1

Onsemi

MMBTH24LT1 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance of 0.45pF.

BFR93AW

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

MRF559

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Collector Current (IC): .15 A; Transistor Element Material: SILICON;

2N2907A

General Diode

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

MPS6507

Onsemi

MPS6507 by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. It has a min hFE of 25 and fT of 800 MHz, making it ideal for amplifier applications. The package style is cylindrical with through-hole terminals and a max power dissipation of 0.625W.

934047460135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .012 A; Terminal Position: DUAL;

BFP540FESDH6327XTSA1

Infineon Technologies

BFP540FESDH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.08A IC, and 30GHz fT. It is used in S Band amplifiers for high-frequency applications. The package is small outline, surface mountable with flat terminals, suitable for AEC-Q101 standards.

934065992115

NXP Semiconductors

RF Small Signal Bipolar Transistors;

BFR840L3RHESDE6327XTSA1

Infineon Technologies

BFR840L3RHESDE6327XTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max fT of 75 GHz. It is designed for X Band applications, featuring a max VCE of 2.25V and IC of 0.035A. This single configuration amplifier has a chip carrier package and gold terminal finish for high-frequency performance.

BFG540/X,215

NXP Semiconductors

NXP Semiconductors' BFG540/X,215 is a NPN RF BJT with 4 terminals in a small outline package. It operates in L Band with fT of 9000 MHz and can handle 0.12 A collector current. Ideal for amplifier applications, it has a max power dissipation of 0.5 W at 150°C ambient temperature.