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INA321EA/250G4

Manufacturer

Texas Instruments
Manufacturer's Part Number

INA321EA/250G4
Description

INSTRUMENTATION AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: TSSOP; Package Shape: SQUARE;
Datasheet

Datasheet

3679 In Stock

Popular Products

2N7002

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;

Details

BSS138

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

Details

2N7002-T1-E3

Vishay Intertechnology

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

Details

1552200168

Molex

WIRE AND CABLE;

Details

2N7002

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

SMBJ18CA

Eic Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMMBT3904LT1G

Onsemi

SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.

Details

BSS138LT1G

Onsemi

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.

Details

BAV99

Jiangsu Changjiang Electronics Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;

Details

SS14

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;

Details

2N2222A

Gec Plessey Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LM317T

Samsung

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel; Maximum Line Regulation (%/V): .07;

Details

1N4148

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

Hy Electronic

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358M

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

Details

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

Details

LP2950CDT-3.3G

Onsemi

LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.

Details

NE555D

Texas Instruments

NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.

Details

INA321EA/250G4 Technical Details

TYPE	DESCRIPTION
Package Body Material:	Plastic/Epoxy
Maximum Time At Peak Reflow Temperature (s):	30 s
Maximum Seated Height:	0.043 in (1.1 mm)
Nominal Bandwidth (3dB):	500 kHz
Maximum Supply Voltage Limit:	7.5 V
Maximum Bias Current (IIB) @25C:	10 pA
Sub-Category:	Instrumentation Amplifiers
Maximum Supply Current:	70 μA
Surface Mount:	Yes
Terminal Finish:	Nickel Palladium Gold Silver
No. of Terminals:	8
Maximum Input Offset Voltage:	500 µV
Terminal Position:	Dual
Package Style (Meter):	Small Outline, Thin Profile, Shrink Pitch
Technology:	CMOS
JESD-30 Code:	S-PDSO-G8
Minimum Voltage Gain:	5
Package Shape:	Square
Terminal Form:	Gull Wing
Maximum Operating Temperature:	125 °C (257 °F)
Package Code:	TSSOP
Amplifier Type:	Instrumentation Amplifier
Nominal Slow Rate:	0.4 V/us
Width:	0.118 in (3 mm)
Moisture Sensitivity Level (MSL):	2
Maximum Voltage Gain:	1000
Maximum Non Linearity:	0.01 %
Nominal Voltage Gain:	25
Packing Method:	Tape And Reel
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 °C (-67 °F)
Maximum Average Bias Current (IIB):	10 pA
No. of Functions:	1
Qualification:	No
Minimum Common Mode Reject Ratio:	90 dB
Package Equivalence Code:	TSSOP8,.19
Length:	0.118 in (3 mm)
Nominal Supply Voltage / Vsup (V):	5 V
Peak Reflow Temperature (C):	260 °C (500 °F)
Terminal Pitch:	0.026 in (0.65 mm)
Maximum Input Offset Current (IIO):	10 pA
Temperature Grade:	Military
Power Supplies (V):	3/5 V

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