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TIP47

Manufacturer

STMicroelectronics
Manufacturer's Part Number

TIP47
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
Datasheet

Datasheet

8688 In Stock

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2N7002

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TIP47 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	10 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	40 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	40 W
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	10
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	250 V
Maximum VCEsat:	1 V

Category Top Products

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Bourns TIP122-S is a NPN Darlington transistor with hFE of 1000, VCE of 100V, and IC of 5A. Ideal for power applications in various industries due to its high current gain and voltage capabilities. Package style is flange mount with through-hole terminals for easy installation.

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BD679 by Onsemi is a NPN Power BJT with 40W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has hFE of 750 and can handle up to 80V collector-emitter voltage. This transistor operates at temperatures up to 150°C in a through-hole package style.

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;