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NJVMJD122T4G
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ManufacturerOnsemi
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Manufacturer's Part NumberNJVMJD122T4G
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DescriptionNPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
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Datasheet
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DetailsNJVMJD122T4G Technical Details
TYPE | DESCRIPTION |
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Nominal Transition Frequency (fT): | 4 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 8 A |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 20 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Moisture Sensitivity Level (MSL): | 1 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 100 |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -65 Cel |
Maximum Collector-Emitter Voltage: | 100 V |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | 260 |