NJVMJD122T4G by Onsemi

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NJVMJD122T4G

  • Manufacturer
    Onsemi
  • Manufacturer's Part Number
    NJVMJD122T4G
  • Description
    NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
  • Datasheet

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NJVMJD122T4G Technical Details

TYPE DESCRIPTION
Nominal Transition Frequency (fT): 4 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 8 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 20 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Minimum Operating Temperature: -65 Cel
Maximum Collector-Emitter Voltage: 100 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260

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