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MJD117T4
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ManufacturerSTMicroelectronics
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Manufacturer's Part NumberMJD117T4
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DescriptionPNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
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Datasheet
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DetailsMJD117T4 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 2 A |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 50 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Power Dissipation Ambient: | 20 W |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | TO-252 |
Polarity or Channel Type: | PNP |
Minimum DC Current Gain (hFE): | 200 |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 100 V |
Peak Reflow Temperature (C): | 260 |
Maximum VCEsat: | 3 V |