MJD117T4 by STMicroelectronics

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MJD117T4

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part Number
    MJD117T4
  • Description
    PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
  • Datasheet

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MJD117T4 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Maximum Power Dissipation Ambient: 20 W
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 200
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Peak Reflow Temperature (C): 260
Maximum VCEsat: 3 V

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