Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
10,550	$0.157	$1,653.712

TIP122

Manufacturer

Samsung
Manufacturer's Part Number

TIP122
Description

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

10550 In Stock

Popular Products

BAV99

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;

Details

LM358M

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

STM32H743BIT6

STMicroelectronics

STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.

Details

BAV99

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Lite-on Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CN

Texas Instruments

LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.

Details

M39029/56-351

Amphenol

CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;

Details

SS14

Forward International Electronics

RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;

Details

USB3320C-EZK-TR

Microchip Technology

Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.

Details

LM107H

Intersil

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;

Details

1N4148

Kec

RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;

Details

C0603X104K5RACAUTO

KEMET Corporation

C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.

Details

DS18B20Z+

Analog Devices

DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.

Details

LM555CM

Harris Semiconductor

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

Details

2N2222A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMBJ18CA

Multicomp Pro

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;

Details

LM317BD2TG

Onsemi

LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.

Details

TIP122 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	5 A
Configuration:	DARLINGTON
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-220AB
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	1000
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	65 W
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel

Category Top Products

TIP110

General Transistor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

BD138

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

TIP35C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Transistor Element Material: SILICON;

BCP5616

Rectron

Rectron's BCP5616 is a NPN BJT transistor with VCEsat of 0.5V, hFE of 25, and IC of 1A. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates up to 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.

TIP50

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

TIP122

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;

BD140-16

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 100; Terminal Form: THROUGH-HOLE;

BD139

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

TIP31C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;

BDW93C

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;

BD138

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

TIP111

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;

2SC5200-O(S1,F

Toshiba

Power Bipolar Transistors;

TIP29C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

TIP42A

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;

TIP42C

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

BD679AS

Fairchild Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

BDX53C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;

MJ11015G

Onsemi

MJ11015G by Onsemi is a PNP power BJT with 200W power dissipation, 120V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a round package with flange mount style.

BD14010STU

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Terminal Form: THROUGH-HOLE;