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MJ11015G

Manufacturer

Onsemi
Manufacturer's Part Number

MJ11015G
Description

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 30 A;
Datasheet

Datasheet

416 In Stock

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MJ11015G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	4 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	30 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	200 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-204AA
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	200
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	120 V

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