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| QTY | Unit Price | Ext Price |
| 416 | $6.982 | $2,904.720 |
MJ11015G
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ManufacturerOnsemi
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Manufacturer's Part NumberMJ11015G
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DescriptionPNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 30 A;
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Datasheet
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DetailsMJ11015G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 4 MHz |
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | 30 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 200 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-MBFM-P2 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | PIN/PEG |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | COLLECTOR |
| JEDEC-95 Code: | TO-204AA |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 200 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 120 V |
