Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
416	$6.982	$2,904.720

MJ11015G

Manufacturer

Onsemi
Manufacturer's Part Number

MJ11015G
Description

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 30 A;
Datasheet

Datasheet

416 In Stock

Popular Products

EU2B-YS3203F

Idec

ROTARY SWITCH;

Details

1N4148

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN-2803A

Sprague Electric

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;

Details

BAV99

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LIS3DHTR

STMicroelectronics

LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.

Details

1N4148

Renesas Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

M24308/2-1F

Adi Electronics

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;

Details

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

SMMBT2222ALT1G

Onsemi

SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.

Details

BAV99

National Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

08055C104KAT4A

KYOCERA AVX

08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.

Details

LM358MX

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LM358N

Taejin Technology

OPERATIONAL AMPLIFIER; Temperature Grade: AUTOMOTIVE; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

CRCW06031K00FKEAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.

Details

LM107H

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

SS14

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;

Details

MMBT3904LT1G

Onsemi

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.

Details

2N2222A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BAV99

Lite-on Technology

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;

Details

MJ11015G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	4 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	30 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	200 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-204AA
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	200
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	120 V

Category Top Products

TIP120

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

BU508AW

NXP Semiconductors

The NXP Semiconductors BU508AW is a single NPN BJT transistor for switching applications. With a max VCEsat of 1V, it can handle up to 8A collector current and 125W power dissipation. Operating at temperatures up to 150°C, it has a max collector-emitter voltage of 700V making it suitable for high-power electronic circuits.

2N3055

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

FZT851TA

Diodes Incorporated

FZT851TA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 6A IC, and 3W Ptot. Ideal for switching applications, it has hFE of min. 100 and fT of 130MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

TIP147

Mospec Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;

TIP122

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;

MJD44H11J

Nexperia

MJD44H11J by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, max collector-emitter voltage of 80V, and max collector current of 8A. With a small outline package style, it operates b/w -55 to 150°C and offers a transition frequency of 160MHz.

TIP29C

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; No. of Terminals: 3; Transistor Element Material: SILICON;

TIP115

Crimson Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;

TIP42C

Forward International Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

TIP111

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB;

TIP142T

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;

TIP112

Texas Instruments

TIP112 by Texas Instruments is a NPN Darlington transistor with 100V max collector-emitter voltage, 50W power dissipation, and hFE of 500. Ideal for power applications in electronics due to its high current gain and low collector-emitter saturation voltage. Package style is flange mount with through-hole terminals for easy installation.

ULN2003ANE4

Texas Instruments

ULN2003ANE4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with through-hole terminals, suitable for complex configurations.

TIP41C

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

TIP41C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

TIP122

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

ULN2803AN

Texas Instruments

ULN2803AN by Texas Instruments is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and operates up to 150°C. The package style is in-line with through-hole terminals for easy installation.

D44H8

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;

TIP147

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;