TIP147T by New Jersey Semiconductor Products

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,721	$0.988	$3,676.348

TIP147T

Manufacturer

New Jersey Semiconductor Products
Manufacturer's Part Number

TIP147T
Description

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;
Datasheet

Datasheet

3721 In Stock

Popular Products

FDC5614P

TAIZHOU ELECTRONICS CO LTD

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

Details

LM358M

Raytheon Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

SS14+

Multicomp Pro

SS14+ by Multicomp Pro is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 40V. It is designed for surface mount applications in electronic circuits, offering a small outline package style and dual terminal position. With a temperature range from -65°C to 150°C, it is suitable for various industrial and consumer electronics.

Details

BSS123,215

NXP Semiconductors

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

Details

2N2222A

Telcom Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

1N4148

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;

Details

1N4148

Terry Semiconductor

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

1N4148WT

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358N

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SS14

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SBAV99LT1G

Onsemi

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

Details

OPA2277UA

Burr-Brown Corporation

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

LL4148-GS08

Vishay Intertechnology

The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.

Details

MC33269T-3.3G

Onsemi

MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.

Details

1N4148

ROHM

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BSS138-TP

Micro Commercial Components

BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.

Details

ULN2803A

Onsemi

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

Details

1N5819HW-7-F

Diodes Incorporated

1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.

Details

1N4148WS

Meritek Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

TIP147T Technical Details

TYPE	DESCRIPTION
Maximum Collector Current (IC):	10 A
Maximum Collector-Emitter Voltage:	100 V
Configuration:	SINGLE
Transistor Element Material:	SILICON
No. of Elements:	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	500

Category Top Products

BD14016S

Onsemi

The Onsemi BD14016S is a PNP BJT transistor with 80V VCEO, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications, it has a min hFE of 100 and operates up to 150°C. The through-hole package with matte tin finish is suitable for various electronic designs.

TIP42A

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;

TIP31C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

TIP111

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB;

JANTX2N3055

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; JESD-30 Code: O-MBFM-P2;

TIP147

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Body Material: PLASTIC/EPOXY;

TIP50

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

TIP32C

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 100 V;

TIP125

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB;

TIP50

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;

TIP31C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;

2N3055H

Onsemi

The Onsemi 2N3055H is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.

TIP31C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;

BD139

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

BCP56-16T1G

Onsemi

BCP56-16T1G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. With a max operating temp of 150°C and hFE of 100, it offers high performance in a compact design.

D44H8

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; JESD-609 Code: e0; Transistor Element Material: SILICON;

PZT2222A

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 40 V;

2N3055

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

NJVMJD127T4G

Onsemi

NJVMJD127T4G by Onsemi is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 100V VCEO, 8A IC, and 20W power dissipation. Ideal for amplifier applications due to its high hFE of 100 and operating temperature range from -65 to 150°C.

D44H8

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;