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K4S641632H-TC75

Manufacturer

Samsung
Manufacturer's Part Number

K4S641632H-TC75
Description

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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K4S641632H-TC75 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.001 Amp
Organization:	4MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	3 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	135 mA
No. of Terminals:	54
Maximum Clock Frequency (fCLK):	133 MHz
No. of Words:	4194304 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G54
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	TSOP2
Width:	10.16 mm
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	67108864 bit
Self Refresh:	YES
Sequential Burst Length:	1,2,4,8,FP
Memory IC Type:	SYNCHRONOUS DRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	TSOP54,.46,32
Refresh Cycles:	4096
Interleaved Burst Length:	1,2,4,8
Length:	22.22 mm
Maximum Access Time:	5.4 ns
No. of Words Code:	4M
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	AUTO/SELF REFRESH
Terminal Pitch:	.8 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V
Power Supplies (V):	3.3

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