MT53E1536M32D4DT-046WT:A by Micron Technology

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MT53E1536M32D4DT-046WT:A

Manufacturer

Micron Technology
Manufacturer's Part Number

MT53E1536M32D4DT-046WT:A
Description

LPDDR4 DRAM;
Datasheet

Datasheet

303 In Stock

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MT53E1536M32D4DT-046WT:A Technical Details

TYPE	DESCRIPTION
Memory IC Type:	LPDDR4 DRAM

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KM41C256P-7

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MT40A1G8SA-062E:ETR

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W9864G6KH-6

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MT41K256M16TW-107:P/TR

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AS4C4M16SA-7TCNTR

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AS4C4M16SA-7TCNTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization and 16-bit memory width. Operating at temperatures from 0 to 70°C, it features self-refresh mode and offers a memory density of 67108864 bits. Ideal for applications requiring fast access times and high memory capacity in compact spaces.

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W631GU6NB-09

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MTA36ASF8G72PZ-2G9B2

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DRAMs;

AS4C32M16SB-7TCN

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Alliance Memory's AS4C32M16SB-7TCN is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85°C. Featuring self-refresh and four bank page burst access mode, it offers 33554432 words memory density for various commercial applications.

IS42S16160J-7TL

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IS42S16160J-7TL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 3.3V, has a memory density of 268435456 bit, and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.

MT40A1G8SA-062EAIT:E

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IS42S32400F-6TL-TR

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Samsung's K4B1G1646G-BCMA DDR3 DRAM features 64MX16 organization, 933 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max standby current of 0.01 Amp.

MTA8ATF2G64HZ-3G2F1

Micron Technology

DDR4 DRAM MODULE;