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2N2907A

Manufacturer

Raytheon Semiconductor
Manufacturer's Part Number

2N2907A
Description

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
Datasheet

Datasheet

4823 In Stock

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2N2907A Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.6 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Maximum Turn On Time (ton):	45 ns
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.4 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	100 ns
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
JEDEC-95 Code:	TO-18
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V

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