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2N2219A
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ManufacturerRaytheon Semiconductor
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Manufacturer's Part Number2N2219A
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
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Datasheet
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Details2N2219A Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 300 MHz |
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | .8 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Maximum Turn On Time (ton): | 35 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .8 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| Maximum Turn Off Time (toff): | 285 ns |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 200 Cel |
| JEDEC-95 Code: | TO-5 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 100 |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
