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SMMUN2211LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberSMMUN2211LT1G
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DescriptionNPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
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Datasheet
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DetailsSMMUN2211LT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | BIP General Purpose Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .4 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | SMMUN2211LT1GOSDKR SMMUN2211LT1G-ND 2832-SMMUN2211LT1GTR SMMUN2211LT1GOSCT 2156-SMMUN2211LT1G-OS SMMUN2211LT1GOSTR ONSONSSMMUN2211LT1G |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 35 |
| JESD-609 Code: | e3 |
| Maximum Collector-Emitter Voltage: | 50 V |
| Additional Features: | BUILT IN BIAS RESISTOR RATIO IS 1 |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |