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NJVMJD45H11T4G

Manufacturer

Onsemi
Manufacturer's Part Number

NJVMJD45H11T4G
Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 90 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
Datasheet

Datasheet

1712 In Stock

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1N4148WS

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Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.

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LL4148

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RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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06035C103KAT2A

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1N4148WT

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MMBT2222ALT1G

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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C1210C104K5RACTU

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KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.

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CDSOT23-SM712

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Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.

Details

LM317BD2TG

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LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.

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2N7002

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

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LM78L05ACMX/NOPB

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1N4148

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NE555D

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BAV99

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NJVMJD45H11T4G Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	90 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	8 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Other Names:	2832-NJVMJD45H11T4G NJVMJD45H11T4GOSDKR NJVMJD45H11T4GOSCT NJVMJD45H11T4G-ND NJVMJD45H11T4GOSTR
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	80 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

Category Top Products

TIP50

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

ULN2804A

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ULN2804A by Motorola is a power BJT with NPN polarity and 8 banks of Darlington configuration. It has a max VCEsat of 1.6V and can handle a max collector current (IC) of 0.5A. This transistor is commonly used for switching applications due to its built-in diode and resistor.

MJE3055T

Onsemi

MJE3055T by Onsemi is a NPN BJT transistor with max. power dissipation of 75W, ideal for switching applications. With a max. collector-emitter voltage of 60V and max. collector current of 10A, it operates b/w -55 to 150°C. Its package style is flange mount with through-hole terminals, making it suitable for various power circuit designs.

TIP110

General Transistor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

TIP50

Electronic Transistors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 400 V; No. of Elements: 1;

JANTX2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 2; Terminal Position: BOTTOM;

TIP147T

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;

TIP127

Changzhou Galaxy Century Microelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;

BD679A

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BD679A by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications, it features a built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a max collector current of 4A and transition frequency of 10MHz.

TIP41CTU

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TIP41CTU by Onsemi is a NPN power BJT with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

BD243C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; JESD-30 Code: R-PSFM-T3;

MJD44H11G

Onsemi

MJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.

Bulk

NJVMJD45H11T4G

1712 In Stock

Popular Products

BAV99

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C1210C104K5RACTU

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LM317BD2TG

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1N4148

LL4148

NE555D

BAV99

NJVMJD45H11T4G Technical Details

Category Top Products

TIP50

ULN2804A

MJE3055T

TIP110

TIP50

JANTX2N3055

TIP147T

TIP127

BD679A

TIP41CTU

BD243C

MJD44H11G

TIP122

TIP120

TIP29C

TIP31C

BD138

TIP110

BD140

BD139-16