Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,887	Request Pricing	-

MPSH11RLRM

Manufacturer

Onsemi
Manufacturer's Part Number

MPSH11RLRM
Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; JESD-30 Code: O-PBCY-T3; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

1887 In Stock

Popular Products

LM358D-T

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

NE555D

Texas Instruments

NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.

Details

NE555/D

General Electric Solid State

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

Details

SDR0604-101KL

Bourns

SDR0604-101KL by Bourns is a surface mount fixed inductor with a nominal inductance of 100 uH. It is a general purpose inductor suitable for power applications, with a max rated current of 0.52 A and a self-resonance frequency of 9 MHz.

Details

SMBJ18CA

Jgd Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

2N7002

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;

Details

M85049/85-08W02

Amphenol

CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;

Details

BSS138

Yangzhou Yangjie Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;

Details

2N7002

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;

Details

LM107H

Advanced Micro Devices

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;

Details

1N4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

M39029/58-360

Defense Logistics Agency

CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;

Details

MBR0520L-T1

Won-top Electronics

MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.

Details

SMBJ18CA

Weitron Technology

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Good-ark Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

Details

M24308/2-1F

Air Electro

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;

Details

2N2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

Details

LM358N

Philips Semiconductors

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

2N7002

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

Details

TM4C1294NCPDTI3

Texas Instruments

TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.

Details

MPSH11RLRM Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	650 MHz
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	NPN
Surface Mount:	NO
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	25 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.7 pF

Category Top Products

BFP520FH6327XTSA1

Infineon Technologies

Infineon's BFP520FH6327XTSA1 is a NPN RF BJT transistor with 4 terminals, suitable for KU band applications. It has a max fT of 45 GHz, VCE of 2.5V, and IC of 0.04A. Ideal for amplifier circuits in automotive electronics due to AEC-Q101 compliance.

BFU730LXZ

NXP Semiconductors

The NXP Semiconductors BFU730LXZ is an NPN RF Small Signal BJT with a max power dissipation of 0.16W and min DC current gain of 205. Ideal for applications requiring a max collector current of 0.03A, such as surface mount designs in telecommunications and wireless communication systems.

BFR98

STMicroelectronics

BFR98 by STMicroelectronics is a NPN RF BJT transistor with single configuration for amplifier applications. It has a max VCEsat of 0.5V, operates in the very high frequency band up to 500MHz, and can handle a collector current of 0.5A.

2SC4915-O,LF(B

Toshiba

2SC4915-O,LF(B by Toshiba is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 17 dB and operates in the very high frequency band up to 550 MHz. With a max collector-emitter voltage of 30V and dual terminal position, it is suitable for small outline surface mount designs.

MMBTH10

Micro Commercial Components

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

MCH3007-TL-H

Onsemi

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

BFQ254/I

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .3 A; JESD-30 Code: O-CRDB-F4;

BFR340FH6327XTSA1

Infineon Technologies

The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.

JANS2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Elements: 1; Reference Standard: MIL-19500;

MMBTH24LT3

Onsemi

MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.

BFP740FH6327XTSA1

Infineon Technologies

BFP740FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 14 dB min power gain, ideal for amplifier applications in X Band frequencies. It features a max operating temperature of 150°C, 0.16 W power dissipation, and 45000 MHz nominal transition frequency.

2N3866

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; Maximum VCEsat: 1 V;

934064609115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .03 A; Highest Frequency Band: KU BAND;

MPSH10

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

BFU520XR

NXP Semiconductors

The NXP Semiconductors BFU520XR is an NPN RF BJT transistor with a max fT of 10500 MHz. It has a collector-emitter voltage of 16V and operates in the L band frequency range. Ideal for amplifier applications, it comes in a small outline package with gull wing terminals for surface mount assembly.

EC3H02BA

Onsemi

The Onsemi EC3H02BA is an NPN RF BJT with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.1W, min DC current gain of 120, and max operating temp of 150 °C. Ideal for high-frequency circuits up to 5000MHz requiring low collector current at 0.07A.

KSC1730O

Onsemi

KSC1730O by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 1100MHz, and can handle a max IC of 0.05A.

BFR93AW

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1; Transistor Element Material: SILICON;

MPSH81RLRA

Onsemi

MPSH81RLRA by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low 0.85pF capacitance. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.

START540TR

STMicroelectronics

START540TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.18 W and a nominal transition frequency of 45 GHz. It operates in the C band with a max collector-emitter voltage of 4.5 V. This compact surface mount transistor ensures efficient performance in high-frequency circuits.