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MMUN2211LT1G

Manufacturer

Onsemi
Manufacturer's Part Number

MMUN2211LT1G
Description

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
Datasheet

Datasheet

1003 In Stock

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MMUN2211LT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	MMUN2211LT1GOSDKR ONSONSMMUN2211LT1G MMUN2211LT1GOS-ND 2156-MMUN2211LT1G-OS MMUN2211LT1GOS MMUN2211LT1GOSTR 2832-MMUN2211LT1GTR MMUN2211LT1GOSCT
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	35
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 1
Peak Reflow Temperature (C):	260

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