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2N3906
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ManufacturerSamsung
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Manufacturer's Part Number2N3906
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DescriptionPNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
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Datasheet
10911 In Stock
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Details2N3906 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 250 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .2 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Maximum Turn On Time (ton): | 70 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .35 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| Maximum Turn Off Time (toff): | 300 ns |
| JESD-30 Code: | O-PBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 150 Cel |
| JEDEC-95 Code: | TO-92 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 30 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
| Maximum Collector-Base Capacitance: | 4.5 pF |
| Maximum VCEsat: | .4 V |