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2N3906
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ManufacturerSamsung
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Manufacturer's Part Number2N3906
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DescriptionPNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
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Datasheet
2436 In Stock
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Details2N3906 Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 250 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .2 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Maximum Turn On Time (ton): | 70 ns |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .35 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
Maximum Turn Off Time (toff): | 300 ns |
JESD-30 Code: | O-PBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Maximum Operating Temperature: | 150 Cel |
JEDEC-95 Code: | TO-92 |
Polarity or Channel Type: | PNP |
Minimum DC Current Gain (hFE): | 30 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 40 V |
Maximum Collector-Base Capacitance: | 4.5 pF |
Maximum VCEsat: | .4 V |