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MMBD354LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberMMBD354LT1G
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DescriptionMIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
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Datasheet
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DetailsMMBD354LT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Config: | COMMON CATHODE, 2 ELEMENTS |
| Diode Type: | MIXER DIODE |
| Frequency Band: | ULTRA HIGH FREQUENCY |
| Sub-Category: | Microwave Mixer Diodes |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Maximum Diode Capacitance: | 1 pF |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | ONSONSMMBD354LT1G MMBD354LT1GOSCT MMBD354LT1GOSTR MMBD354LT1GOSDKR MMBD354LT1GOS 2156-MMBD354LT1G-OS MMBD354LT1GOS-ND |
| JEDEC-95 Code: | TO-236AB |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | .225 W |
| Peak Reflow Temperature (C): | 260 |
