Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
2,737	$0.786	$2,150.324

FDML7610S

Manufacturer

Onsemi
Manufacturer's Part Number

FDML7610S
Description

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Drain-Source On Resistance: .0075 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

2737 In Stock

Popular Products

RK73H2ATTD10R0F

Koa Speer Electronics

RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.

Details

LL4148

Vishay Intertechnology

Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.

Details

LM317BD2TG

Onsemi

LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.

Details

BAV99

Jgd Semiconductors

RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;

Details

LM317T/NOPB

National Semiconductor

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3; Package Shape: RECTANGULAR;

Details

2N7002

Calogic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;

Details

2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

Details

LM2931AZ-5.0G

Onsemi

LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.

Details

M24308/2-1F

Bel Fuse

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;

Details

SMBJ18CA

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

USB3320C-EZK-TR

Microchip Technology

Microchip Technology's USB3320C-EZK-TR is a Bus Controller IC with 32 terminals, operating at 1.6-2V. It supports USB bus compatibility, clock frequency up to 60MHz, and CMOS technology. Ideal for applications requiring Universal Serial Bus peripherals in compact designs with low power consumption.

Details

SMBJ18CA

World Products

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Infinex

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;

Details

2N2222A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

Details

2N7002

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;

Details

BSS138

Vishay Intertechnology

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.

Details

1N4148

Pro-an Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Micro Commercial Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDML7610S Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	40 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD SILVER
No. of Terminals:	6
Maximum Power Dissipation (Abs):	2.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0075 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	60 A
Peak Reflow Temperature (C):	260

Category Top Products

ZXMP6A17E6TA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;

BSC026N08NS5ATMA1

Infineon Technologies

Infineon Technologies' BSC026N08NS5ATMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 80V, max pulsed drain current of 400A, and low on-resistance of 0.0026 ohm. Ideal for switching applications in various industries.

2N7000

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);

FQD16N25CTM

Onsemi

FQD16N25CTM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 250V. It is an N-channel transistor with a max drain current of 16A and a max power dissipation of 160W. This transistor is commonly used for switching applications.

SI7145DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7145DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 100A and EAS of 125mJ, this MOSFET operates in ENHANCEMENT MODE. With 0.0026 ohm RDS(on), it can handle up to 104W power dissipation at 150°C.

IRFP460PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .27 ohm; Avalanche Energy Rating (EAS): 960 mJ;

FDC5614P

TAIZHOU ELECTRONICS CO LTD

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

FDMS86163P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 100 V;

IRF540ZPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 91 W; Qualification: Not Qualified; Transistor Element Material: SILICON;

IRFP460APBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

BSZ086P03NS3EGATMA1

Infineon Technologies

Infineon BSZ086P03NS3EGATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 160A IDM, and 0.0134 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features METAL-OXIDE SEMICONDUCTOR tech and operates up to 150°C.

SPP08N80C3XKSA1

Infineon Technologies

SPP08N80C3XKSA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high voltage and current handling capabilities.

BSC900N20NS3GATMA1

Infineon Technologies

BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.

AUIRFN8459TR

Infineon Technologies

AUIRFN8459TR by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 66mJ EAS, and 0.0059 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has DUAL terminals and AEC-Q101 standard compliance.

FDML7610S

Fairchild Semiconductor

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

IRFP460

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain Current (ID): 20 A; No. of Terminals: 3;

BSC060N10NS3GATMA1

Infineon Technologies

BSC060N10NS3GATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.006 ohm Drain-Source Resistance, and 360A Pulsed Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Suitable for high-power systems requiring efficient power management in compact designs.

IRF640

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;

IRF7309TRPBF

International Rectifier

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; JESD-30 Code: R-PDSO-G8; Maximum Drain Current (ID): 4 A;

CSD19537Q3

Texas Instruments

CSD19537Q3 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 100V DS Breakdown Voltage, 219A Max Pulsed Drain Current, and 0.0166 ohm Max Drain-Source On Resistance. Ideal for high-power switching circuits with an operating temperature range of -55 to 150 °C.