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FDML7610S
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ManufacturerOnsemi
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Manufacturer's Part NumberFDML7610S
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DescriptionN-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Drain-Source On Resistance: .0075 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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Datasheet
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DetailsFDML7610S Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 12 A |
| Maximum Pulsed Drain Current (IDM): | 40 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD SILVER |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 2.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .0075 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 60 A |
| Peak Reflow Temperature (C): | 260 |
