Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,000	Request Pricing	-

PMBD352212

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

PMBD352212
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

1000 In Stock

Popular Products

1N4148

Rugao Dachang Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM107H/883

Advanced Micro Devices

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;

Details

BAV99

National Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BAV99

Plessey Semiconductors Discrete Components Div

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

CRG0805F10K

TE Connectivity

TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.

Details

SMMBT2222ALT1G

Onsemi

SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.

Details

SMBJ18CA

Taiwan Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Renesas Technology

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Vishay Intertechnology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803A

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;

Details

2N7002

Central Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

Details

CC0603KRX7R9BB103

Yageo

Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

Details

LM555CN

Rochester Electronics

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Shape: RECTANGULAR; Surface Mount: NO; No. of Functions: 1;

Details

IRLML6402TRPBF

Infineon Technologies

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

Details

USB3320C-EZK-TR

Standard Microsystems

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

Details

LL4148

International Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

FDC5614P

MSKSEMI SEMICONDUCTOR

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

Details

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

Details

PMBD352212 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Forward Voltage (VF):	.6 V
Config:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Type:	MIXER DIODE
Frequency Band:	ULTRA HIGH FREQUENCY
Maximum Output Current:	30 A
Surface Mount:	YES
Maximum Reverse Current:	.25 uA
Diode Element Material:	SILICON
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	DUAL
Maximum Diode Capacitance:	1 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-G3
Minimum Breakdown Voltage:	4 V
No. of Elements:	2
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.25 W
Terminal Form:	GULL WING
Maximum Operating Temperature:	100 Cel

Category Top Products

HSMS-282K-TR2G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-286B-TR2G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT1706WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-094H

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT15-104

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SMMBD301LT3

Onsemi

The Onsemi SMMBD301LT3 is a Schottky mixer diode with 1.5 pF capacitance, suitable for VHF to UHF applications. It features a small outline package with gull wing terminals and tin lead finish, making it ideal for surface mount designs requiring up to 0.2 W power dissipation.

MMBD501

Onsemi

The Onsemi MMBD501 is a single Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It comes in a small outline rectangular package with gull wing terminals for surface mount assembly. Ideal for microwave mixing and detection circuits requiring high-frequency performance.

HSMS-282L-BLKG

Broadcom

HSMS-282L-BLKG by Broadcom is a Schottky mixer diode with 3 elements, operating in C band. It has a max forward voltage of 0.34V and reverse current of 0.1uA, suitable for microwave applications requiring high frequency performance at temperatures ranging from -65°C to 150°C.

BAT14-063P

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT1704WH6327XT

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-095D

Infineon Technologies

MIXER DIODE; Surface Mount: YES; JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel; Maximum Forward Voltage (VF): .44 V; Terminal Finish: Tin/Lead (Sn/Pb);

HSMS-2850-TR2G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-2825-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR28-AR1

STMicroelectronics

BAR28-AR1 by STMicroelectronics is a single mixer diode with Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max diode capacitance of 2 pF. The package body material is glass, suitable for applications requiring isolated case connection and operating temperatures ranging from -65 °C to 200°C.

BAR11-AR1

STMicroelectronics

STMicroelectronics' BAR11-AR1 is a single Schottky mixer diode with 1.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications, it features an isolated round glass package with axial terminals.

BAT15-014

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BA892E6327XT

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-282K-TR1G

Broadcom

Broadcom's HSMS-282K-TR1G is a Schottky mixer diode with 2 elements, operating in C band. With a max forward voltage of 0.34V and reverse current of 0.1uA, it is ideal for microwave applications. This surface-mount diode has a small outline package and can withstand temperatures from -65 to 150°C.

BAT17

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

934034890113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;