PIMN31,115 by NXP Semiconductors

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PIMN31,115

  • Manufacturer
    NXP Semiconductors
  • Manufacturer's Part Number
    PIMN31,115
  • Description
    NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Maximum Collector Current (IC): .5 A; No. of Terminals: 6;
  • Datasheet

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PIMN31,115 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .42 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 70
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Peak Reflow Temperature (C): 260

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