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934055230135

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934055230135
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

1134 In Stock

Popular Products

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1N4148WS

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1N4148

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2N7002DWH6327XTSA1

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ULN2803A

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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NE555/D

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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BAV99-7-F

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1N4148

Gulf Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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BAV99

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

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1N4148WSF-7

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1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.

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MBR130T1G

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MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.

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M24308/2-1F

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1N4148WT-7

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1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.

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M39029/56-351

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STM32H743XIH6

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SS14

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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LM358N

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

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934055230135 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	MIXER DIODE
Frequency Band:	VERY HIGH FREQUENCY
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	DUAL
Maximum Diode Capacitance:	1.05 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	PLANAR DOPED BARRIER
JESD-30 Code:	R-PDSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.5 W
Terminal Form:	GULL WING
Moisture Sensitivity Level (MSL):	1

Category Top Products

BAR19-ARX

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BAR19-ARX by STMicroelectronics is a single ultra high frequency mixer diode with 1 pF capacitance and 0.25 uA reverse current. It operates at up to 125 °C, making it suitable for microwave applications requiring high-speed signal processing in isolated connections.

BAT15-013ES

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BAT45-ARX

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BAT45-ARX by STMicroelectronics is a single mixer diode with ultra high frequency band. It features a max diode capacitance of 1.1 pF and max reverse current of 0.1 uA, making it ideal for microwave applications requiring low noise figure and high output current up to 30 A at 125 °C operating temperature.

BAT15-115R

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MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

BAT1502LSE6433XTMA1

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BAT1502LSE6433XTMA1 by Infineon Technologies is a single Schottky mixer diode with low barrier Schottky technology. It operates in X Band frequency range, has a max forward voltage of 0.41V, and can handle a max output current of 0.11A. This chip carrier package diode is suitable for microwave applications requiring high-speed mixing and detection capabilities at temperatures ranging from -55 to 150°C.

PMBD353

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

DB3X314K0L

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The Onsemi MMBD701 is a single Schottky mixer diode with ultra high frequency band, 1 pF diode capacitance, and silicon element material. It comes in a small outline rectangular package suitable for surface mount applications. Ideal for microwave mixing and detection circuits in various electronic devices.

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HSMS-286K-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating in C band. It has a max forward voltage of 0.35V and can withstand temperatures from -65 to 150°C. Ideal for microwave applications requiring high frequency performance in a small outline package.

1PS76SB17

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BAR28-B2

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BAR28-B2 by STMicroelectronics is a single Schottky mixer diode with a max operating temperature of 200 °C and frequency band from VHF to UHF. With a diode capacitance of 2 pF, it is ideal for applications requiring very high frequency signal mixing in microwave circuits. The package shape is round with an isolated case connection, making it suitable for use in various RF and microwave systems.

HSMS-2804-TR1G

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HSMS-2804-TR1G by Broadcom is a Schottky mixer diode with 2 elements, common cathode configuration, and max forward voltage of 1V. It has a small outline package style, operates up to 150°C, and is suitable for microwave applications requiring low diode capacitance and high breakdown voltage.

DB2J31400L

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934055230115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT62-03W

Infineon Technologies

Infineon Technologies' BAT62-03W is a single-config microwave mixer & detector diode with ultra high frequency range. It has a max diode capacitance of 0.6 pF and can operate at temperatures up to 150°C. This Schottky diode, made of silicon, is commonly used in applications requiring low barrier Schottky barrier type diodes.

TMMBAR19

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TMMBAR19 by STMicroelectronics is a single Schottky mixer diode with ultra-high frequency band, suitable for microwave applications. It features a max forward voltage of 0.6V, max output current of 30A, and a package body material made of glass. With surface mount capability and operating temperatures ranging from -65 °C to 125°C, it is ideal for high-frequency circuit designs requiring low diode capacitance and reverse current.

BA481113

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MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT15-093P

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT45-AZX

STMicroelectronics

BAT45-AZX by STMicroelectronics is a single Schottky mixer diode with 1.1 pF capacitance and 0.1 uA reverse current, suitable for ultra high frequency applications. With a max forward voltage of 1 V and noise figure of 7 dB, it operates at temperatures up to 125 °C in an isolated round glass package.