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934054935335

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

934054935335
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

2548 In Stock

Popular Products

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IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.

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ERJU06F10R0V

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ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.

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ULN2803ADWG4

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ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.

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SMBJ18CA

Eic Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

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Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;

Details

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

Details

LL4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM107H

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OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

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NDT2955

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NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

Details

E8WSDC12-32.768KTR

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PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

Details

FDN306P

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;

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LM358N

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

MBRS140T3G

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MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.

Details

261

New England Microwave

Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;

Details

BAV99

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Details

IRLML6402TRPBF

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IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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1N4148

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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ECS-.327-12.5-17X-TR

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ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.

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LM358N

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

934054935335 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	MIXER DIODE
Frequency Band:	VERY HIGH FREQUENCY
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	DUAL
Maximum Diode Capacitance:	1.2 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	PLANAR DOPED BARRIER
JESD-30 Code:	R-PDSO-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.715 W
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel

Category Top Products

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HSMS-2822-TR2G by Broadcom is a microwave mixer diode with Schottky technology. It operates in the C band frequency range and has 2 series-connected elements. This small outline diode has a max power dissipation of 0.25W and is suitable for surface mount applications in high-frequency circuits.

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Broadcom's HSMS-2850-TR2G is a Schottky mixer diode with zero barrier technology. Operating from 0.915 GHz to 4 GHz, it comes in a small outline package suitable for L band applications. The diode has a max temperature of 150°C and features gull wing terminals for surface mounting.

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Skyworks Solutions SMS7630-005LF is a Schottky mixer diode with 2 elements, X Band frequency band, and 0.3 pF diode capacitance. It is ideal for microwave applications requiring small outline package style and surface mount capability at up to 150°C operating temperature.

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Broadcom's HSMS-2812G is a Schottky mixer diode with 2 elements, max pulsed input power of 0.25W, and diode capacitance of 1.2pF. It is ideal for microwave applications requiring high-speed signal mixing in small outline packages.

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NSR201MXT5G by Onsemi is a single microwave mixer diode with a Schottky technology. It operates in C band to Ku band frequencies, with a max forward voltage of 0.32V and output current of 0.05A. Ideal for applications requiring high frequency mixing and detection in electronic circuits.

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