Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
3,973	Request Pricing	-

1PS79SB63

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

1PS79SB63
Description

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet

Datasheet

3973 In Stock

Popular Products

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

Details

LM358N

Motorola

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

M24308/2-1F

Cristek Interconnects

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;

Details

1N4148

Microchip Technology

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WT

Eic Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDD5614P

Onsemi

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

Details

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

BAV99

Philips Semiconductors

RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;

Details

2N7002

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

Details

LM555CN

Rca Solid State

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

2N7002

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;

Details

MBRS3200T3G

Onsemi

MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.

Details

SS14

Vishay Intertechnology

Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.

Details

BAV99

Infinex

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Goodwork Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Transys Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;

Details

1N4148

Texas Instruments

1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.

Details

LL4148

Shanghai Lunsure Electronic Technology

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;

Details

1PS79SB63 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	SINGLE
Diode Type:	MIXER DIODE
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	DUAL
Maximum Diode Capacitance:	.5 pF
Package Style (Meter):	SMALL OUTLINE
Technology:	SCHOTTKY
JESD-30 Code:	R-PDSO-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT

Category Top Products

BA592E6327

Infineon Technologies

BA592E6327 by Infineon Technologies is a single microwave mixer diode with a max forward voltage of 1V and very high frequency band. It has a peak repetitive peak reverse voltage of 35V, making it suitable for applications requiring small outline surface mount diodes in high-frequency circuits. The package material is plastic/epoxy with matte tin terminal finish, operating up to 125°C.

MMBD770T1G

Onsemi

MMBD770T1G by Onsemi is a single Schottky mixer diode with a max forward voltage of 1V. It operates in the very high frequency to ultra high frequency band, suitable for microwave applications. This surface-mount diode has a max power dissipation of 0.12W and can withstand temperatures from -55°C to 125°C.

NSR15ADXV6T5

Onsemi

NSR15ADXV6T5 by Onsemi is a Schottky mixer diode with 2 elements, suitable for medium frequency applications. It has a max forward voltage of 0.68 V and operates in temperatures ranging from -65 to 150 °C. This surface-mount diode features a small outline package style and is ideal for microwave mixing and detection tasks.

BA682

NXP Semiconductors

MIXER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT14-036

Infineon Technologies

MIXER DIODE; Surface Mount: NO; Diode Element Material: SILICON; Maximum Operating Frequency: 4 GHz; Minimum Operating Frequency: 2 GHz; Maximum Noise Figure: 6.5 dB;

BA482116

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT17-05

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

933463300113

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT63-07W-H6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum Operating Temperature: -55 Cel; Reverse Test Voltage: 3 V; Maximum Power Dissipation: .1 W;

HSMS-2850-TR2G

Broadcom

Broadcom's HSMS-2850-TR2G is a Schottky mixer diode with zero barrier technology. Operating from 0.915 GHz to 4 GHz, it comes in a small outline package suitable for L band applications. The diode has a max temperature of 150°C and features gull wing terminals for surface mounting.

HSMS-2860-BLKG

Broadcom

HSMS-2860-BLKG by Broadcom is a Schottky mixer diode with frequency range of 0.915 GHz to 5.8 GHz, ideal for C Band applications. It features a small outline package, surface mount configuration, and can operate at temperatures up to 150°C.

BAT19-AZX

STMicroelectronics

BAT19-AZX by STMicroelectronics is a single-config microwave mixer diode with ultra-high frequency band. Featuring a max diode capacitance of 1.2 pF and max reverse current of 0.1 uA, it is ideal for applications requiring high-frequency signal mixing in electronic circuits. With a Schottky technology and silicon diode element material, this diode operates at temperatures up to 125 °C, making it suitable for various RF applications.

BAT15-04R-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Diode Element Material: SILICON; Maximum Operating Frequency: 12 GHz; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

SMMBD301LT1G

Onsemi

The Onsemi SMMBD301LT1G is a single Schottky mixer diode with ultra-high frequency capabilities. It features a max diode capacitance of 1.5 pF and operates in a temperature range from -55 to 125 °C. Ideal for microwave applications, this surface-mount diode has a small outline package style and tin terminal finish.

BAT6307WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

BAR19-AZ2

STMicroelectronics

BAR19-AZ2 by STMicroelectronics is a single mixer diode with ultra high frequency band. It features a max forward voltage of 0.6V and operates at temperatures up to 125 °C. Ideal for applications requiring Schottky technology in microwave circuits.

BAT17-04W

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-114ES

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT17-07E6327

Infineon Technologies

Infineon's BAT17-07E6327 is a Schottky mixer diode with 2 elements, suitable for VHF to UHF frequencies. It has a max forward voltage of 0.35V and operates b/w -55°C to 150°C. This surface-mount diode in small outline package is ideal for microwave applications requiring low capacitance and high reverse current tolerance.

MA4E2054B1-287T

TE Connectivity

TE Connectivity's MA4E2054B1-287T is a Schottky mixer diode with 2 elements, suitable for X band applications. It has low barrier Schottky technology, 0.3 pF diode capacitance, and can handle 0.075 W pulsed input power.