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MMBT5179

Manufacturer

National Semiconductor
Manufacturer's Part Number

MMBT5179
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
Datasheet

Datasheet

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MMBT5179 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	900 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.225 W
Minimum Power Gain (Gp):	15 dB
Other Names:	MMBT5179CT-NDR MMBT5179CT 2166-MMBT5179-488 2832-MMBT5179TR MMBT5179TR-NDR MMBT5179DKR MMBT5179TR
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	25
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Additional Features:	LOW NOISE
Maximum Collector-Base Capacitance:	1 pF
Maximum VCEsat:	.4 V

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