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QTY | Unit Price | Ext Price |
10,666 | $0.288 | $3,072.505 |
TIP120
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ManufacturerMotorola
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Manufacturer's Part NumberTIP120
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DescriptionNPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
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Datasheet
10666 In Stock
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DetailsTIP120 Technical Details
TYPE | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 4 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 5 A |
Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
Terminal Finish: | Tin/Lead (Sn/Pb) |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 65 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Maximum Power Dissipation Ambient: | 65 W |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 1000 |
JESD-609 Code: | e0 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 60 V |
Additional Features: | LEADFORM OPTIONS ARE AVAILABLE |
Maximum Collector-Base Capacitance: | 200 pF |
Maximum VCEsat: | 4 V |