Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
416	Request Pricing	-

MT48LC4M32B2P-6:G

Manufacturer

Micron Technology
Manufacturer's Part Number

MT48LC4M32B2P-6:G
Description

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
Datasheet

Datasheet

416 In Stock

Popular Products

LM317LMX/NOPB

Texas Instruments

LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.

Details

1N4148

Baneasa S A

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Promax-johnton

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;

Details

SS14

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

Details

ATMEGA328P-AU

Atmel

MICROCONTROLLER, RISC; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 32; Package Code: TQFP; Package Shape: SQUARE;

Details

SMBJ18CA

Jgd Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V;

Details

ULN2803A

YOUTAI SEMICONDUCTOR CO LTD

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;

Details

1N4148

International Components

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;

Details

DS18B20Z+

Analog Devices

DS18B20Z+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.

Details

LL4148

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LM555CM

Renesas Electronics

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

LL4148

Continental Device India

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

LL4148-GS08

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Details

ABS10-32.768KHZ-T

Abracon

Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.

Details

1N4148WT

Continental Device India

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CN

Harris Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

1N4148

Silicon Standard

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM317T

Analog Devices

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;

Details

MT48LC4M32B2P-6:G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	3 V
Sub-Category:	DRAMs
Surface Mount:	YES
Technology:	CMOS
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	SYNCHRONOUS
Package Code:	TSOP2
Input/Output Type:	COMMON
No. of Ports:	1
Self Refresh:	YES
Sequential Burst Length:	1,2,4,8,FP
Memory Width:	32
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP86,.46,20
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.5 mm
Maximum Standby Current:	.002 Amp
Organization:	4MX32
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Maximum Supply Current:	320 mA
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	86
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	4194304 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE
JESD-30 Code:	R-PDSO-G86
Maximum Operating Temperature:	70 Cel
Width:	10.16 mm
Memory Density:	134217728 bit
Memory IC Type:	SYNCHRONOUS DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
Refresh Cycles:	4096
Interleaved Burst Length:	1,2,4,8
Length:	22.22 mm
Maximum Access Time:	5.5 ns
No. of Words Code:	4M
Nominal Supply Voltage / Vsup (V):	3.3
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V
Power Supplies (V):	3.3

Category Top Products

MT40A256M16LY-062EIT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.

NT5CC256M16EP-EKT

Nanya Technology

NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.

MT40A512M16TB-062E:R

Micron Technology

Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.

IS42S16400J-5TL

Integrated Silicon Solution

IS42S16400J-5TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at up to 200MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access and high data density in a small outline package.

IS42S32400F-6TLI

Integrated Silicon Solution

IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.

IS42S16160G-7BLI

Integrated Silicon Solution

IS42S16160G-7BLI by Integrated Silicon Solution is a 16MX16 SYNCHRONOUS DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals in a GRID ARRAY package style, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high-speed memory performance.

IS42S16800F-6TL

Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports common I/O type. Ideal for commercial applications requiring fast memory access and low standby current consumption.

HY5DU573222FP-33

Sk Hynix

SK Hynix's HY5DU573222FP-33 is a DDR1 DRAM with 8MX32 organization, operating at 300 MHz. It features 144 terminals in a low profile grid array package, suitable for applications requiring high-speed synchronous memory access and common I/O type. With a max clock frequency of 300 MHz and 268435456-bit memory density, it offers fast data processing capabilities for commercial-grade systems.

MT48LC16M16A2P-6A:D

Micron Technology

MT48LC16M16A2P-6A:D by Micron Technology is a 16MX16 Synchronous DRAM with a max clock frequency of 167 MHz. It operates at a nominal voltage of 3.3V and has a memory density of 268435456 bits. This memory IC type is commonly used in applications requiring high-speed data storage and retrieval.

MT41K1G8TRF-125IT:E

Micron Technology

Micron Technology's MT41K1G8TRF-125IT:E is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at 1.35V, suitable for applications requiring high-speed synchronous memory with low power consumption.

IS43TR16512S2DL-125KBLI

Integrated Silicon Solution

IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

MT41K128M16HA-15E:D

Silicon360

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST; JESD-30 Code: R-PBGA-B96;

K4A8G085WB-BCPB

Samsung

Samsung's K4A8G085WB-BCPB DDR4 DRAM features 1066 MHz clock frequency, 78 terminals, and 1.2V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage with a memory density of 8.59 Gb.

MT61K256M32JE-21:T

Micron Technology

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.

IS43TR16128B-15HBLI

Integrated Silicon Solution

IS43TR16128B-15HBLI by Integrated Silicon Solution is a 128MX16 DDR3 DRAM with 667 MHz clock frequency. It operates asynchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MT48LC16M16A2P-7EIT:GTR

Micron Technology

MT48LC16M16A2P-7EIT:GTR by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a voltage of 3.3V and has an access time of 5.4 ns. This DRAM is commonly used in industrial applications that require high-speed and reliable memory storage.

AS4C256M16D3C-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3C-12BIN is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, operating at 1.5V. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type in a thin profile grid array package.

MT47H32M16NF-25EIT:HTR

Micron Technology

Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.

MT18HTF12872AZ-80EG1

Micron Technology

Micron Technology's MT18HTF12872AZ-80EG1 is a 240-terminal DRAM with 128MX72 organization, operating at 400 MHz. It has a memory density of 9663676416 bits and supports a max clock frequency of 400 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.

IS42S16400J-7TLI

Integrated Silicon Solution

IS42S16400J-7TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 16-bit memory width. It operates at 143 MHz clock frequency, has 4096 refresh cycles, and supports common I/O type. Ideal for industrial applications requiring fast data access and reliable performance in a compact package.