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MT47H256M8EB-25E:C

Manufacturer

Micron Technology
Manufacturer's Part Number

MT47H256M8EB-25E:C
Description

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

1600 In Stock

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MT47H256M8EB-25E:C Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	DRAMs
Surface Mount:	YES
Technology:	CMOS
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	TFBGA
Input/Output Type:	COMMON
No. of Ports:	1
Self Refresh:	YES
Sequential Burst Length:	4,8
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	BGA60,9X11,32
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Standby Current:	.012 Amp
Organization:	256MX8
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Maximum Supply Current:	250 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	60
Maximum Clock Frequency (fCLK):	400 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
JESD-30 Code:	R-PBGA-B60
Maximum Operating Temperature:	85 Cel
Width:	9 mm
Other Names:	MT47H256M8EB-25E:C-ND -MT47H256M8EB-25E:C 557-1588 123858
Memory Density:	2147483648 bit
Memory IC Type:	DDR2 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Length:	11.5 mm
Maximum Access Time:	.4 ns
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.8
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.9 V
Power Supplies (V):	1.8

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