Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
1,600	$8.037	$12,859.200

MT47H256M8EB-25E:C

Manufacturer

Micron Technology
Manufacturer's Part Number

MT47H256M8EB-25E:C
Description

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

1600 In Stock

Popular Products

1N4148WS

Vishay Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

FDLL4148

Onsemi

FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.

Details

BAV99

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Yageo

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M39029/58-360

Positronic Industries

CONNECTOR ACCESSORY; MIL-Connector Accessory Name: CONTACT; DIN Conformity: NO; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354; Contact Type: CRIMP REAR RELEASE;

Details

FT232RQ-REEL

FTDI

FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.

Details

SMBJ18CA

Semitron

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

GRM155R71H103KA88D

Murata Manufacturing

The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.

Details

ECA2DHG4R7

Panasonic

ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.

Details

STM32H743BIT6

STMicroelectronics

STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.

Details

LM107H

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

Details

LM317TG

Texas Instruments

LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.

Details

ABS25-32.768KHZ-T

Abracon

Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.

Details

BAV99

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ERJ3EKF1002V

Panasonic

Panasonic's ERJ3EKF1002V is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance.

Details

1N4148WT

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Details

LM358N

STMicroelectronics

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Synsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Semiconductors

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;

Details

MT47H256M8EB-25E:C Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	DRAMs
Surface Mount:	YES
Technology:	CMOS
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	TFBGA
Input/Output Type:	COMMON
No. of Ports:	1
Self Refresh:	YES
Sequential Burst Length:	4,8
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	BGA60,9X11,32
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Standby Current:	.012 Amp
Organization:	256MX8
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Maximum Supply Current:	250 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	60
Maximum Clock Frequency (fCLK):	400 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
JESD-30 Code:	R-PBGA-B60
Maximum Operating Temperature:	85 Cel
Width:	9 mm
Other Names:	MT47H256M8EB-25E:C-ND -MT47H256M8EB-25E:C 557-1588 123858
Memory Density:	2147483648 bit
Memory IC Type:	DDR2 DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Length:	11.5 mm
Maximum Access Time:	.4 ns
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.8
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.9 V
Power Supplies (V):	1.8

Category Top Products

KM416C1000AJ-7

Samsung

Samsung's KM416C1000AJ-7 is a 1MX16 DRAM with 70ns access time, operating at 5V. It features a small outline package, 3-state output, and fast page access mode. Ideal for commercial applications requiring high memory density and fast data retrieval.

MT40A1G8SA-075:E

Micron Technology

MT40A1G8SA-075:E by Micron Technology is a DDR4 DRAM with 1GX8 organization, 1073741824 words, and 8589934592 bit memory density. It operates synchronously, has self-refresh capability, and is commonly used in multi-bank page burst access mode applications.

MT48LC16M16A2TG-75

Micron Technology

MT48LC16M16A2TG-75 by Micron Technology is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for synchronous memory applications requiring fast access times and low power consumption.

M393B1K70DH0-YH9

Samsung

Samsung M393B1K70DH0-YH9 DDR DRAM Module features 1.35V supply, 667MHz clock frequency, and 72 memory width. Ideal for high-performance computing applications with a max operating temperature of 85°C and self-refresh capability.

MT41K256M8DA-125IT:K

Micron Technology

Micron Technology's MT41K256M8DA-125IT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed and efficient memory performance in a compact grid array package.

NT5CC256M16EP-EKT

Nanya Technology

NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.

MT53E2G32D4DT-046AAT:A

Micron Technology

LPDDR4 DRAM;

AS4C4M16SA-7TCN

Alliance Memory

AS4C4M16SA-7TCN by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at 0-70 °C. Featuring self-refresh and four-bank page burst access mode, it offers 67108864-bit memory density for various commercial applications.

MT47H128M16HG-3IT

Micron Technology

Micron Technology's MT47H128M16HG-3IT is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in industrial environments.

S27KL0642GABHB023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Organization: 8MX8;

MT40A1G8WE-075E:B

Micron Technology

Micron Technology's MT40A1G8WE-075E:B is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MT48LC8M16A2P-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 85°C max temp. It features self-refresh, operates in industrial grade, and has 8388608 words memory capacity. Ideal for applications requiring fast access time and high memory density.

MT53E768M32D4DE-046AAT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency. The package style is grid array with thin profile, making it ideal for space-constrained designs.

K4S281632O-LI75T

Samsung

Samsung's K4S281632O-LI75T is an 8MX16 DRAM with 3.3V supply, operating from -40 to 85°C. Featuring a max clock frequency of 133 MHz, it offers a memory density of 134217728 bits suitable for industrial applications requiring high-speed data processing.

EDB4432BBBJ-1DAAT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAAT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.

MT41K128M16JT-125XIT:K

Micron Technology

Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.

IS42S16400J-7BLI-TR

Integrated Silicon Solution

IS42S16400J-7BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temp. Ideal for industrial applications requiring high memory density and fast access times.

MT53E512M32D1ZW-046IT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046IT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

AS4C256M16D3C-12BCN

Alliance Memory

Alliance Memory's AS4C256M16D3C-12BCN is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for applications requiring high-speed synchronous operation. It features common I/O type, self-refresh capability, and operates at 1.5V supply voltage. Ideal for systems needing fast data access in compact form factors.

MT48LC4M32B2B5-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AIT:L is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in industrial environments.