MT41K256M16HA-125IT:E by Micron Technology

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
514	Request Pricing	-

MT41K256M16HA-125IT:E

Manufacturer

Micron Technology
Manufacturer's Part Number

MT41K256M16HA-125IT:E
Description

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

514 In Stock

Popular Products

1N4148

Sun Wai Electronic

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Recovery Time: .004 us; Maximum Repetitive Peak Reverse Voltage: 100 V;

Details

2N7002,215

NXP Semiconductors

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

Details

1N4148WS

Surge Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBRS140T3G

Onsemi

MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.

Details

SMBJ18CA

Brightking

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WT

Onsemi

1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.

Details

BAV99

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

C1206C104K5RACTU

KEMET Corporation

KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.

Details

B340A-13-F

SPC TECHNOLOGY/ MULTICOMP

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;

Details

1N4148

Hitachi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N2222A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BSS138

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;

Details

DS18B20+

Analog Devices

DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.

Details

1N4148

Weitronic Enterprise

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM358ADR

Texas Instruments

LM358ADR by Texas Instruments is an operational amplifier with 2 functions, featuring a max input offset voltage of 5000 uV and nominal voltage of 5V. Widely used in applications requiring high voltage gain, it operates within a temperature range of 0-70°C and offers frequency compensation for stability.

Details

BAV99

Rfe International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Vishay Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM317TG

Onsemi

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;

Details

ULN-2803A

Sprague Electric

BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;

Details

MT41K256M16HA-125IT:E Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.283 V
Sub-Category:	DRAMs
Surface Mount:	YES
Technology:	CMOS
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Package Code:	TFBGA
Input/Output Type:	COMMON
No. of Ports:	1
Self Refresh:	YES
Sequential Burst Length:	8
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA96,9X16,32
Additional Features:	AUTO/SELF REFRESH
Peak Reflow Temperature (C):	260
Terminal Pitch:	.8 mm
Maximum Standby Current:	.016 Amp
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Maximum Supply Current:	243 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	800 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
JESD-30 Code:	R-PBGA-B96
Maximum Operating Temperature:	95 Cel
Width:	9 mm
Other Names:	-MT41K256M16HA-125 IT:E 138415 MT41K256M16HA-125 IT:E-ND MT41K256M16HA-125IT:E -MT41K256M16HA-125 IT:E-ND -MT41K256M16HA-125IT:E
Memory Density:	4294967296 bit
Memory IC Type:	DDR3L DRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
Refresh Cycles:	8192
Interleaved Burst Length:	8
Length:	14 mm
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.35
Temperature Grade:	OTHER
Maximum Supply Voltage (Vsup):	1.45 V
Power Supplies (V):	1.35

Category Top Products

IS42S16320F-7TLI

Integrated Silicon Solution

IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.

MT48LC4M32B2P-6IT:G

Micron Technology

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.

M393B4G70DM0-YK0

Samsung

Samsung M393B4G70DM0-YK0 DDR DRAM MODULE offers 4GX72 organization, 1.35V nominal voltage, and 309237645312 bit memory density. Ideal for servers requiring high-capacity and high-speed memory with synchronous operation and self-refresh capability.

MTA4ATF51264HZ-3G2R1

Micron Technology

DDR4 DRAM MODULE;

IS42S16800F-7TLI-TR

Integrated Silicon Solution

IS42S16800F-7TLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times.

MT48LC8M16A2P-6A

Micron Technology

Micron Technology's MT48LC8M16A2P-6A is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.

D2516ECMDXGJD-U

Kingston Technology Company

Kingston's D2516ECMDXGJD-U DDR3L DRAM features 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for applications requiring high memory density and synchronous operation in a grid array package with self-refresh capability.

K4T1G164QF-BCE6

Samsung

Samsung's K4T1G164QF-BCE6 is a 64MX16 DDR2 DRAM with 333 MHz clock frequency. Featuring 67108864 words, it has a memory density of 1073741824 bit and operates at 1.8V. Ideal for applications requiring high-speed data processing and storage in electronic devices.

W972GG6KB25I

Winbond Electronics

Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.

MT48LC16M16A2P-7E

Micron Technology

MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

AS4C16M16SA-7BCN

Alliance Memory

Alliance Memory's AS4C16M16SA-7BCN is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz clock frequency, suitable for commercial applications. Featuring self-refresh and common I/O type, it offers fast access time of 5.4 ns for high-performance memory solutions.

MT41J128M16JT-093:K

Micron Technology

Micron Technology's MT41J128M16JT-093:K is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.

K4S641632D-TC80

Samsung

Samsung's K4S641632D-TC80 is a 4MX16 DRAM with 125 MHz clock frequency, 70°C operating temp, and 3.3V supply. Ideal for commercial applications requiring fast memory access and low power consumption. Features include synchronous operation, self-refresh capability, and small outline package design.

MT53E256M16D1FW-046WT:B

Micron Technology

LPDDR4 DRAM;

MT40A1G16WBU-083E:B

Micron Technology

Micron Technology's MT40A1G16WBU-083E:B is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

LH64256BK-70

Sharp Corporation

LH64256BK-70 by Sharp Corp is a 256Kx4 DRAM with 512 refresh cycles, operating at 70ns access time. It features a CMOS technology, 3-STATE output characteristics, and operates in FAST PAGE mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.

IS42SM16200D-6BLI

Integrated Silicon Solution

IS42SM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 3.3V, has dual bank page burst access mode, and offers a max access time of 5.5 ns. Ideal for industrial applications requiring high-speed and reliable memory performance in a compact grid array package.

MT41K256M16TW-107IT:P

Micron Technology

Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.

IS42S32160D-7BLI

Integrated Silicon Solution

IS42S32160D-7BLI by Integrated Silicon Solution is a 16MX32 SYNCHRONOUS DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for INDUSTRIAL applications, it features FOUR BANK PAGE BURST access mode and offers a memory density of 536870912 bit.

MT47H64M16HR-3L:H

Micron Technology

MT47H64M16HR-3L:H by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and consumes up to 230 mA. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.