Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SST39SF040-55-4I-NHE

Manufacturer

Microchip Technology
Manufacturer's Part Number

SST39SF040-55-4I-NHE
Description

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Technology: CMOS;
Datasheet

Datasheet

Not In Stock

Popular Products

LL4148

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

General Diode

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

Details

CDSOT23-SM712

Bourns

Bourns CDSOT23-SM712 is a bidirectional Transient Voltage Suppressor diode with 400W peak power dissipation and 20uA reverse current. Ideal for surge protection in applications requiring a max clamping voltage of 14V, such as IEC-61000-4-2 compliant systems. Operates b/w -55°C to 150°C with matte tin finish and Gull Wing terminals.

Details

NE555DR

Texas Instruments

NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.

Details

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.

Details

SMBJ18CA

Yageo

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Toshiba

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SS14

Rugao Dachang Electronic

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

Details

1N4148

Baneasa S A

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WS

Cheng-yi Electronic

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138BKW,115

NXP Semiconductors

NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.

Details

LM7805CT/NOPB

National Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;

Details

LM107H/883

Linear Technology

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

Details

LM107H/883

National Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

Details

2N7002

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

Details

M24308/2-1F

Air Electro

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;

Details

LM107H/883

Texas Instruments

LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

Details

SS495A-SP

Honeywell Sensing And Control

SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.

Details

BSS138

Vishay Intertechnology

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.

Details

LL4148

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SST39SF040-55-4I-NHE Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Programming Voltage (V):	5
Minimum Supply Voltage (Vsup):	4.5 V
Sub-Category:	Flash Memories
Surface Mount:	YES
Technology:	CMOS
No. of Sectors/Size:	128
Package Shape:	RECTANGULAR
Terminal Form:	J BEND
Operating Mode:	ASYNCHRONOUS
Package Code:	QCCJ
Moisture Sensitivity Level (MSL):	3
No. of Ports:	1
Toggle Bit:	YES
Memory Width:	8
Qualification:	Not Qualified
Package Equivalence Code:	LDCC32,.5X.6
Minimum Data Retention Time:	100
Peak Reflow Temperature (C):	260
Terminal Pitch:	1.27 mm
Maximum Standby Current:	.0001 Amp
Organization:	512KX8
Output Characteristics:	3-STATE
Maximum Seated Height:	3.556 mm
Maximum Supply Current:	35 mA
Command User Interface:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	32
No. of Words:	524288 words
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PQCC-J32
Maximum Operating Temperature:	85 Cel
Endurance:	100000 Write/Erase Cycles
Width:	11.43 mm
Memory Density:	4194304 bit
Sector Size (Words):	4K
Memory IC Type:	FLASH
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Type:	NOR TYPE
Length:	13.97 mm
Maximum Access Time:	55 ns
No. of Words Code:	512K
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	5.5 V
Data Polling:	YES
Power Supplies (V):	5

Category Top Products

S25FL128SAGMFIG01

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

S25FL128SAGMFIR00

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; JESD-609 Code: e3;

S25FL256SAGMFI003

Spansion

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

SST26VF016BT-104I/SM

Microchip Technology

SST26VF016BT-104I/SM by Microchip: 16MX1 organization, 104 MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring NOR flash memory with 100000 write/erase cycles endurance and 3.6V max supply voltage.

AT45DB081E-SSHN2B-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;

S29GL128S90TFI020

Infineon Technologies

S29GL128S90TFI020 by Infineon Technologies is a 16MX8 NAND flash memory with 128 sectors and 3-STATE output. Operating at 3V, it offers fast access time of 90ns for applications requiring high endurance of 100,000 Write/Erase cycles. With a compact design and low standby current of 0.0001A, it is ideal for space-constrained devices needing reliable non-volatile storage.

S29GL256P10TFI010

Infineon Technologies

S29GL256P10TFI010 by Infineon Technologies is a 256Mx1 NOR flash memory with 256 sectors, operating at 3V. It features an industrial temperature grade, parallel interface, and asynchronous mode. Ideal for applications requiring fast access times and high memory density in compact designs.

S25FL256SAGMFIR00

Spansion

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;

AT45DB321D-SU-SL954

Adesto Technologies

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

AT45DB081D-SSU

Atmel

Atmel's AT45DB081D-SSU is a 8Mx1 NOR type Flash Memory with SPI serial bus, offering 8388608 bit memory density. It operates at 3V, supports up to 66MHz clock frequency, and has a max endurance of 100K Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile data storage.

EMMC04G-M627-X03U

Kingston Technology Company

Kingston's EMMC04G-M627-X03U is a 4GX8 MLC NAND flash memory with 3.3V programming voltage and 200 MHz clock frequency. With a package style of GRID ARRAY, it operates in synchronous mode at temperatures ranging from -25 to 85 °C, making it ideal for high-speed data storage applications.

THGBMJG6C1LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG6C1LBAIL is an 8GX8 flash memory IC with 68719476736-bit memory density. It operates b/w -25°C to 85°C, with a voltage range of 2.7V to 3.6V. This rectangular GRID ARRAY package is surface-mountable and ideal for applications requiring high-speed data storage in compact devices.

W25Q16JVSNIM

Winbond Electronics

W25Q16JVSNIM by Winbond Electronics is a 16Mb flash memory with synchronous operation, 133MHz clock frequency, and 3.3V nominal voltage. Ideal for industrial applications requiring high-speed data storage in a small outline package with gull wing terminals.

M25P40-VMN6PB

Micron Technology

Micron Technology's M25P40-VMN6PB is a NOR type Flash Memory with 512Kx8 organization, operating at 50 MHz. It has a supply voltage range of 2.3V to 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring reliable serial SPI communication and small outline package style.

NAND128W3A2BN6E

Numonyx

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 16MX8;

S29AL008J70TFI020

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

MT29F8G08ABABAWP-IT:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.

S25FL512SAGMFIR10

Infineon Technologies

S25FL512SAGMFIR10 by Infineon Technologies is a 64MX8 NOR type flash memory with 512753664 bit memory density. It operates at a max clock frequency of 133 MHz and has an endurance of 100000 write/erase cycles. Ideal for industrial applications requiring high-speed, low-power serial data storage solutions.

AT45DB081E-SSHN-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

AT45DB161E-SSHD-B

Adesto Technologies

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;