Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IS46TR16256AL-125KBLA2

Manufacturer

Integrated Silicon Solution
Manufacturer's Part Number

IS46TR16256AL-125KBLA2
Description

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

Popular Products

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

Details

BSS138BK,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;

Details

LL4148

Panjit International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

SS14

Dc Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAV99

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

IRLML6402TRPBF

Infineon Technologies

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

Details

USB2514BI-AEZG

Standard Microsystems

BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;

Details

LL4148

Itt Semiconductor

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

BAV99W-7-F

Diodes Incorporated

Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.

Details

1N4148WS

Rectron

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BSS138PS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

Details

MMBT2907ALT1G

Onsemi

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.

Details

M39029/58-360

Defense Logistics Agency

CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;

Details

1N4148

Onsemi

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LAN8720AI-CP-TR

Standard Microsystems

ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;

Details

ULN2803A

Texas Instruments

ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.

Details

ABS25-32.768KHZ-T

Abracon

Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.

Details

2N2222A

Telcom Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

PIC18F4550-I/PT

Microchip Technology

PIC18F4550-I/PT by Microchip: 8-bit microcontroller with 44 terminals, 48 MHz clock frequency, and USB connectivity. Ideal for industrial applications requiring low power mode and 10-bit ADC channels.

Details

IS46TR16256AL-125KBLA2 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.016 Amp
Organization:	256MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Access Mode:	MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup):	1.283 V
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	243 mA
No. of Terminals:	96
Maximum Clock Frequency (fCLK):	800 MHz
No. of Words:	268435456 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Screening Level:	AEC-Q100
Technology:	CMOS
JESD-30 Code:	R-PBGA-B96
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	105 Cel
Package Code:	TFBGA
Width:	9 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	4294967296 bit
Self Refresh:	YES
Sequential Burst Length:	4,8
Memory IC Type:	DDR3L DRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA96,9X16,32
Refresh Cycles:	8192
Interleaved Burst Length:	4,8
Length:	13 mm
Maximum Access Time:	.1 ns
No. of Words Code:	256M
Nominal Supply Voltage / Vsup (V):	1.35
Additional Features:	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.45 V
Power Supplies (V):	1.35

Category Top Products

MT48LC4M32B2P-6AIT:LTR

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and offers 5.4 ns max access time. Ideal for applications requiring high-speed memory performance in harsh environments.

MT41K256M16HA-125:E

Micron Technology

Micron Technology's MT41K256M16HA-125:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and a low supply voltage of 1.35V. Ideal for applications requiring high-speed memory access in compact electronic devices.

KMM591000B-8

Samsung

Samsung's KMM591000B-8 is a 1MX9 DRAM module with 1048576 words, 9437184 bit memory density, and 80 ns max access time. It operates in fast page access mode at a nominal voltage of 5V. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.

KM416C256BJ-7

Samsung

Samsung's KM416C256BJ-7 is a 256Kx16 DRAM with 70ns access time and 512 refresh cycles. It operates at 5V, has a small outline package style, and is ideal for fast page access applications in commercial temperature environments.

S27KL0642GABHB020

Infineon Technologies

Infineon's S27KL0642GABHB020 DRAM offers 8MX8 organization, operates synchronously at up to 200 MHz, and features a self-refresh mode. Ideal for applications requiring high-speed memory access in automotive electronics, with AEC-Q100 screening level ensuring reliability in harsh environments.

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.

S27KL0642DPBHI023

Infineon Technologies

Infineon Technologies' S27KL0642DPBHI023 is a 8MX8 CMOS DRAM with synchronous operation and self-refresh capability. It has a max clock frequency of 166 MHz and a memory density of 67108864 bit. This memory IC type, known as HYPERRAM, is commonly used in applications requiring high-speed data storage and retrieval.

MT48LC4M32B2P-7:GTR

Micron Technology

Micron Technology's MT48LC4M32B2P-7:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70 °C. It features Self Refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for commercial applications requiring high memory density and synchronous operation.

MT48LC4M32B2P-6AXIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.

KVR16LN11/8

Kingston Technology Company

Kingston KVR16LN11/8 DDR DRAM Module features 1Gx64 organization, operates synchronously at 1.35V, and has a memory width of 64 bits. Ideal for applications requiring high-speed data processing in microelectronic assemblies with a max operating temperature of 85°C.

K4T1G164QF-BCE6

Samsung

Samsung's K4T1G164QF-BCE6 is a 64MX16 DDR2 DRAM with 333 MHz clock frequency. Featuring 67108864 words, it has a memory density of 1073741824 bit and operates at 1.8V. Ideal for applications requiring high-speed data processing and storage in electronic devices.

IS43LD32128B-25BLI

Integrated Silicon Solution

IS43LD32128B-25BLI by Integrated Silicon Solution is a 128MX32 LPDDR2 DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a memory density of 4,294,967,296 bits. This DRAM is commonly used in applications that require high-speed data storage and retrieval.

MB814400A-70PZ

Fujitsu Semiconductor America

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: ZIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;

KVR16S11S8/4

Kingston Technology Company

Kingston's KVR16S11S8/4 DDR DRAM Module features 512MX64 organization, 1.5V nominal voltage, and operates synchronously. Ideal for applications requiring a memory width of 64 bits and a memory density of 34359738368 bits, such as servers or high-performance computing systems.

IS42S32400F-7TLI-TR

Integrated Silicon Solution

IS42S32400F-7TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times.

MT41K256M16TW-107IT:P

Micron Technology

Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.

AS4C16M16SA-7BCN

Alliance Memory

Alliance Memory's AS4C16M16SA-7BCN is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz clock frequency, suitable for commercial applications. Featuring self-refresh and common I/O type, it offers fast access time of 5.4 ns for high-performance memory solutions.

IS42S16400J-6TL

Integrated Silicon Solution

IS42S16400J-6TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for commercial applications requiring fast memory access and high data density in a compact form factor.

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

K4B1G0846G-BCH9

Samsung

Samsung's K4B1G0846G-BCH9 DDR3 DRAM features 128MX8 organization, 667 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max supply current of 130 mA.