HYB25D512160BE-6 by Infineon Technologies

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HYB25D512160BE-6

Manufacturer

Infineon Technologies
Manufacturer's Part Number

HYB25D512160BE-6
Description

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet

Datasheet

930 In Stock

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HYB25D512160BE-6 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.004 Amp
Organization:	32MX16
Output Characteristics:	3-STATE
Maximum Seated Height:	1.2 mm
Access Mode:	FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup):	2.3 V
Sub-Category:	DRAMs
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	66
Maximum Clock Frequency (fCLK):	166 MHz
No. of Words:	33554432 words
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE
Technology:	CMOS
JESD-30 Code:	R-PDSO-G66
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	TSOP2
Width:	10.16 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	536870912 bit
Self Refresh:	YES
Sequential Burst Length:	2,4,8
Memory IC Type:	DDR1 DRAM
JESD-609 Code:	e3
Minimum Operating Temperature:	0 Cel
Memory Width:	16
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP66,.46
Refresh Cycles:	8192
Interleaved Burst Length:	2,4,8
Length:	22.22 mm
Maximum Access Time:	.7 ns
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	2.5
Additional Features:	AUTO/SELF REFRESH
Terminal Pitch:	.65 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	2.7 V
Power Supplies (V):	2,5

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