BSS806NH6327XTSA1 by Infineon Technologies

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QTY	Unit Price	Ext Price
709	$0.308	$218.230

BSS806NH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSS806NH6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 20 V;
Datasheet

Datasheet

709 In Stock

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BSS806NH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	2.3 A
Maximum Pulsed Drain Current (IDM):	9.3 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.057 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	10.8 mJ
Other Names:	BSS806N H6327 BSS806NH6327XTSA1TR BSS806N H6327DKR-ND IFEINFBSS806NH6327XTSA1 BSS806NH6327XTSA1CT BSS806N H6327CT BSS806N H6327CT-ND BSS806NH6327XTSA1DKR 2156-BSS806NH6327XTSA1 BSS806N H6327-ND BSS806NH6327 SP000928952 BSS806N H6327TR-ND BSS806N H6327DKR
Maximum Feedback Capacitance (Crss):	29 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	2.3 A

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