BFR193E6327HTSA1 by Infineon Technologies

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BFR193E6327HTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BFR193E6327HTSA1
Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;
Datasheet

Datasheet

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BFR193E6327HTSA1 Technical Details

TYPE	DESCRIPTION
Nominal Transition Frequency (fT):	8000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.08 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.58 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	70
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Maximum Collector-Base Capacitance:	1 pF

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