BAT6202LE6327XTMA1 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
777	Request Pricing	-

BAT6202LE6327XTMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BAT6202LE6327XTMA1
Description

MIXER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Diode Element Material: SILICON; No. of Elements: 1; Maximum Output Current: .02 A;
Datasheet

Datasheet

777 In Stock

Popular Products

STM32F407VGT6

STMicroelectronics

STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).

Details

OHN3020U

Tt Electronics Plc

OHN3020U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 5mT. It features an output range of 25mA and operates in temperatures ranging from -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields, such as automotive sensors or industrial automation systems.

Details

NC7WZ17P6X

Fairchild Semiconductor

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

Details

2N2222A

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LL4148

First Components International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Philips Components

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

ULN2803A

STMicroelectronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

Details

1N4148WT

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;

Details

BAV99

Siemens

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

MBRS360T3G

Onsemi

MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.

Details

1N4148

Temic Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99

Sprague Electric

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;

Details

BAV99

Bkc Semiconductors

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;

Details

1N4148WS

Sinyork

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;

Details

BSS123-7-F

Diodes Incorporated

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.

Details

LM358N

Fairchild Semiconductor

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

1N4148

General Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148WS

Tak Cheong Electronics Holdings

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BAT6202LE6327XTMA1 Technical Details

TYPE	DESCRIPTION
Other Names:	BAT 62-02L E6327-ND SP000016963 BAT6202LE6327XT BAT 62-02L E6327 BAT6202LE6327XTMA1TR
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Forward Voltage (VF):	1 V
Config:	SINGLE
Diode Type:	MIXER DIODE
Maximum Output Current:	.02 A
Maximum Repetitive Peak Reverse Voltage:	40 V
Sub-Category:	Rectifier Diodes
Surface Mount:	YES
Diode Element Material:	SILICON
Technology:	SCHOTTKY
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

551202003B

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT62-03W

Infineon Technologies

Infineon Technologies' BAT62-03W is a single-config microwave mixer & detector diode with ultra high frequency range. It has a max diode capacitance of 0.6 pF and can operate at temperatures up to 150°C. This Schottky diode, made of silicon, is commonly used in applications requiring low barrier Schottky barrier type diodes.

BAS70-06T/R

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-282K-BLKG

Broadcom

HSMS-282K-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating in C band. It has a max forward voltage of 0.34V and reverse current of 0.1uA, suitable for microwave applications requiring high frequency performance in temperatures ranging from -65 to 150°C.

HSMS-2822

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MA4E2037

TE Connectivity

TE Connectivity's MA4E2037 is a SINGLE microwave mixer diode with 0.06 pF capacitance. It features SCHOTTKY technology and GALLIUM ARSENIDE material, suitable for surface mount applications in microwave systems.

BA892-02L

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BA423AL115

NXP Semiconductors

MIXER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

PMBD352

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT14-123P

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BAT1706WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HSMS-282K

Broadcom

Broadcom's HSMS-282K is a Schottky mixer diode with 2 elements, operating in C band. It features a max forward voltage of 0.5V and can handle up to 1A output current. Ideal for microwave applications requiring high barrier Schottky diodes in small outline packages.

BAT15-113S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 7.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

BA423A

NXP Semiconductors

MIXER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BAT15-090D

Infineon Technologies

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: UNSPECIFIED;

BAT1705WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT68-06WE6433

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BAT15-099E6327XT

Infineon Technologies

MIXER DIODE; Maximum Power Dissipation: .1 W; Diode Element Material: SILICON; Technology: SCHOTTKY; Maximum Forward Voltage (VF): .41 V; Peak Reflow Temperature (C): NOT SPECIFIED;

BA892H6433XTMA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TGD0683SSMX

Texas Instruments

TGD0683SSMX by Texas Instruments is a single Schottky mixer diode with gallium arsenide element. It operates in very high frequency to millimeter wave band, suitable for surface mount applications. The package is ceramic-metal sealed co-fired, round shape with isolated case connection.